Zinc oxide by ALD for thin‐film‐transistor application

Abstract— High‐quality ZnO thin films for transparent thin‐film transistors (TFTs) were successfully prepared by using an injection‐type source delivery system for atomic layer deposition (ALD). By using this delivery system, the source delivery pulse time was dramatically reduced to 0.002 sec to minimize processing time. The growth of ZnO thin film at a relatively low temperature of 150°C shows good characteristics. The process factors on the reactants for film growth were characterized. The bottom‐contact bottom‐gate ZnO TFT shows good electrical properties with solid saturation.