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多弧离子镀沉积过程中等离子体参数对薄膜沉积的影响
引用本文:车德良,钟彬,苟伟,李国卿,陈玲玲.多弧离子镀沉积过程中等离子体参数对薄膜沉积的影响[J].真空,2006,43(2):5-8.
作者姓名:车德良  钟彬  苟伟  李国卿  陈玲玲
作者单位:大连理工大学三束材料改性国家重点实验室,辽宁,大连,116024
摘    要:采用平面探针测试了衬底附近的电流密度,弧电流和衬底偏压的增加均有助于增加到达衬底附近的离子的数量。弧电流增加引起村底的温升,衬底偏压对衬底温度影响较小。采用多弧离子镀技术沉积Cr-N薄膜,衬底偏压对薄膜的硬度影响较小;弧电流增大,薄膜的硬度随之降低。XRD分析表明,弧电流较高时,不利于Cr—N相的形成,薄膜中以Cr的宏观液滴为主,薄膜硬度较低。

关 键 词:多弧离子镀  收集电流  偏压  弧电流  Cr-N薄膜
文章编号:1002-0322(2006)02-0005-04
收稿时间:2005-09-06
修稿时间:2005年9月6日

Effect of plasma parameters on thin film deposition during multi-arc ion coating
CHE De-liang,ZHONG Bin,GOU Wei,LI Guo-qing,CHEN Ling-ling.Effect of plasma parameters on thin film deposition during multi-arc ion coating[J].Vacuum,2006,43(2):5-8.
Authors:CHE De-liang  ZHONG Bin  GOU Wei  LI Guo-qing  CHEN Ling-ling
Affiliation:State Key Laboratory of Materials Modification, Dalian University of Technology, Dalian 116024, China
Abstract:Disk probe was used to detect the current density in the vicinity of substrate, and it is found that the increase in either are current of substrate bias is beneficial to the increase in the number of ions getting to the vicinity of substrate. The increase in arc current will cause the temperature rise of substrate, while the effect of substrate bias on its tempetature is weak. When the Cr-N thin films are deposited by multl-arc ion coating process, the substrate bias affects the film hardness not much and arc current is increasing and, as a result, the film hardness decreases. XRD patterns indicated that higher arc current will be disadvantageous to the formation of Cr-N phase . In the thin films the predominant component is the macroscopic Cr liquid drops, thus leading to comparatively low film hardness.
Keywords:multi-arc ion coating  collector current  bias  arc current  Cr-N thin film
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