Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy |
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Abstract: | In this article we discusss the fabrication of junction field-effect transistors (JFETs) using In0.53Ga0.47As grown p-n junction material prepared by molecular beam epitaxy (MBE). For an n-channel doping of 2 × 1016cm-3and a gate length of 2.0µm, these devices are shown to have a transconductance of 50 mS/mm with a corresponding internal transconductance of 67 mS/mm. |
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