Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy |
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| Authors: | Nomura Y Morishita Y Goto S Katayama Y |
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| Affiliation: | Optoelectron. Technol. Res. Lab., Ibaraki, Japan; |
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| Abstract: | GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned |
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