| 反应动力学理论和n型金属氧化物EF的变化范围 |
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| 引用本文： | 袁庆华,刘晓健,李蕾,裘南畹.反应动力学理论和n型金属氧化物EF的变化范围[J].山东大学学报(工学版),2006,36(4):114-116. |
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| 作者姓名： | 袁庆华 刘晓健 李蕾 裘南畹 |
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| 作者单位： | 1. 山东大学,物理与微电子学院,山东,济南,250061
2. 济南半导体研究所,山东,济南,250011 |
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| 摘 要： | 首先，提出了一种用化学反应动力学来研究半导体点缺陷浓度统计分布的理论；其次，用这个理论来研究了有2次施主能级的n型金属氧化物费米能级EF，给出EF的下限EFm为Ed2-RTln2； 第三，用泊松方程的解和电中性方程来估算费米能级，得出EF的上限EFM为Ed1-RTln2.
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| 关 键 词： | 反应动力学 Fermi能级 点缺陷 |
| 文章编号： | 1672-3961(2006)04-0114-03 |
| 收稿时间： | 2004-12-07 |
| 修稿时间： | 2004年12月7日 |
The reaction kinetics theory and the EF variation range of n-type metal oxide |
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| YUAN Qing-hua,LIU Xiao-jian,LI Lei,QIU Nan-yuan.The reaction kinetics theory and the EF variation range of n-type metal oxide[J].Journal of Shandong University of Technology,2006,36(4):114-116. |
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| Authors: | YUAN Qing-hua LIU Xiao-jian LI Lei QIU Nan-yuan |
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| Affiliation: | 1.School of Physics and Microelectronics,Shandong University,Jinan 250061,China；2. Institute of Semiconductor of Jinan,Jinan 250011,China |
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| Abstract: | Firstly,a theory to study the statistical distribution of concentration of semiconductor point-defects is presented by means of reaction-kinetics;Sencondly,by using this theory,the Fermi level E_F of the n-type oxide with two donor levels is studied,and the lower limit E_(Fm) is given by E_(d2)-RTln2; Thirdly,the upper limit E_(Fm) is estimated by the solution of Poisson's equation and neutral equation,and gives E_(FM)=E_(d1)-RTln2. |
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| Keywords: | reaction kinetics Fermi level point defect |
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