4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz |
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Authors: | Weitzel CE Palmour JW Carter CH Nordquist KJ |
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Affiliation: | Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ ; |
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Abstract: | MESFET's were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 μm gate length, 332 μm gate width MESFET's were measured. At νds =25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and fmax=12.9 GHz. At Vds=54 V the power density was 2.8 W/mm with a power added efficiency=12.7% |
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