| 高通量堆NTD硅系统活化剂量计算 |
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| 引用本文： | 雷鸣,周春林,李子彦,邹德光,刘鹏,蔡文超.高通量堆NTD硅系统活化剂量计算[J].核电子学与探测技术,2016(9):953-957. |
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| 作者姓名： | 雷鸣 周春林 李子彦 邹德光 刘鹏 蔡文超 |
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| 作者单位： | 中国核动力研究设计院,成都,610005 |
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| 摘 要： | 根据单晶硅及靶桶材料成分、测量的辐照孔道中子通量谱与辐照时间,采用点燃耗程序ORIGEN与蒙特卡罗程序MCNP耦合计算高通量堆中子嬗变掺杂(NTD)硅辐照系统活化后的外照射剂量当量率及各种活化产物放射性核素衰减变化情况,同时对各种活化核素剂量率贡献及相应衰减时间进行了分析。通过计算结果与堆厅γ电离室剂量率监测对比验证及堆厅屏蔽层厚度的保守估算,表明目前NTD硅系统转运过程屏蔽设计满足辐射防护要求,并提出有益建议。
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| 关 键 词： | 高通量堆 剂量当量 NTD硅 ORIGEN |
Calculation of Dose Level of NTD Silicon System Being Irradiated by Neutrons in HFETR |
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| Abstract: | According to the material composition, flux spectrum measured and irradiation time, the dose and attenuation of products of NTD silicon system irradiated are calculated with ORIGEN and MCNP software.The different contributions of dose and decay time of product activation nuclide are analyzed.Meanwhile, the validation of calculation with the measurement of ionization chamber and estimation of shield thickness of hall show that the shield of NTD silicon system irradiated could meet the requirement of radiation protection and some suggestions aree offered. |
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| Keywords: | HFETR dose equivalent NTD silicon ORIGEN |
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