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分子束外延Hg0.68Cd0.32Te薄膜光致发光和喇曼散射的研究
引用本文:姬荣斌,王善力.分子束外延Hg0.68Cd0.32Te薄膜光致发光和喇曼散射的研究[J].红外与毫米波学报,1998,17(2):87-90.
作者姓名:姬荣斌  王善力
作者单位:中国科学院上海技术物理研究所红外物理国家重点实验室及半导体薄膜材料研究中心,上海,200083
基金项目:上海市博士后科研项目,,
摘    要:对利用MEB技术生长的Hg0.68Cd0.32Te薄膜进行了光致发光和喇曼光谱的研究,拟合薄膜光致发光谱得到的禁带宽度,与红外透射谱得到的薄膜带宽相近;其半宽仅为5meV,带尾能量小于1.3meV,显示了较高的薄膜质量。

关 键 词:光致发光  红外材料  喇曼散射  远红外  汞镉碲
修稿时间:1997年8月14日

PHOTOLUMINESCENCE AND RAMAN SCATTERING SPECTROSCOPIES OF MBE-GROWN Hg0.68Cd0.32Te EPILAYER
JI Rong-Bin,WANG Shan-Li,YANG Jian-rong,YU Mei-Fang,QIAO Yim-YI,CHANG Yong,LI Ba-Ao,HE Li.PHOTOLUMINESCENCE AND RAMAN SCATTERING SPECTROSCOPIES OF MBE-GROWN Hg0.68Cd0.32Te EPILAYER[J].Journal of Infrared and Millimeter Waves,1998,17(2):87-90.
Authors:JI Rong-Bin  WANG Shan-Li  YANG Jian-rong  YU Mei-Fang  QIAO Yim-YI  CHANG Yong  LI Ba-Ao  HE Li
Abstract:Using photoluminescence (PL) and Raman scattering (RS), the MBE grown Hg 1- x Cd x Te ( x =0.325) epilayers were studied. The PL measurement shows a strong near band emission peak with a FWHM of 5meV, which indicates high crystal quality obtained. Three peaks, the relatively strong HgTe like TO mode at 119cm -1 and HgTe like LO at 139cm -1 and a weak LA mode at 93cm -1 , were observed on RS spectra. The weak peak at 93cm -1 has not been reported previously. The assignment of the peak is based on the comparison with the result of far infrared transmittance spectra(FIT).
Keywords:Hg    0  68  Cd    0  32  Te films  photoluminescence (PL)  Raman scattering  far  infrared transmittance spectra(FIT)  
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