| 4 W/mm蓝宝石衬底AlGaN/GaN HEMT |
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| 引用本文： | 任春江,李忠辉,焦刚,董逊,李肖,陈堂胜,李拂晓. 4 W/mm蓝宝石衬底AlGaN/GaN HEMT[J]. 固体电子学研究与进展, 2007, 27(3): 320-324 |
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| 作者姓名： | 任春江 李忠辉 焦刚 董逊 李肖 陈堂胜 李拂晓 |
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| 作者单位： | 单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016;单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 报道了利用南京电子器件研究所生长的蓝宝石衬底AlGaN/GaN异质结材料制作的HEMT,器件功率输出密度达4W/mm。通过材料结构及生长条件的优化,利用MOCVD技术获得了二维电子气(2DEG)面密度为0.97×1013cm-2、迁移率为1000cm2/Vs的AlGaN/GaN异质结构材料,用此材料完成了栅长1μm、栅宽200μm AlGaN/GaN HEMT器件的研制。小信号测试表明器件的fT为17GHz、最高振荡频率fmax为40GHz;负载牵引测试得到2GHz下器件的饱和输出功率密度为4.04W/mm。
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| 关 键 词： | 氮化镓 高电子迁移率晶体管 二维电子气 单位截止频率 最高振荡频率 |
| 文章编号： | 1000-3819（2007）03-320-05 |
| 修稿时间： | 2006-01-05 |
4 W/mm AlGaN/GaN HEMTs Grown on Sapphire Substrate |
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| REN Chunjiang,LI Zhonghui,JIAO Gang,DONG Xun,LI Xiao,CHEN Tangsheng,LI Fuxiao. 4 W/mm AlGaN/GaN HEMTs Grown on Sapphire Substrate[J]. Research & Progress of Solid State Electronics, 2007, 27(3): 320-324 |
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| Authors: | REN Chunjiang LI Zhonghui JIAO Gang DONG Xun LI Xiao CHEN Tangsheng LI Fuxiao |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing, 210016, CHN |
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| Abstract: | AlGaN/GaN HEMTs grown on sapphire substrate were fabricated with 4 W/mm output power density. The devices with a gate length of 1 μm and a gate width of 200 μm were fabricated on the AlGaN/GaN heterostructure sample grown by MOCVD on sapphire substrate. 2-demensional electron gas (2DEG) density of 0.97×1013 cm-2 and mobility of 1 000 cm2/Vs were measured by Hall measurement. A current gain cut-off frequency of 17 GHz and a maximum oscillation frequency of 40 GHz were obtained through small signal measurement. Saturation output power density reached to 4.04 W/mm at 2GHz employing a load-pull setup under optimum matching. |
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| Keywords: | GaN HEMT 2DEG unit current gain frequency maximum oscillation frequency |
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