| 在双镶嵌铜互联中O.13微米器件生成用的基于PVD和ALD阻挡层的先进技术 |
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| 引用本文： | PrabuGopalraja SurajRengarajan 等.在双镶嵌铜互联中O.13微米器件生成用的基于PVD和ALD阻挡层的先进技术[J].半导体技术,2003,28(4):42-46. |
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| 作者姓名： | PrabuGopalraja SurajRengarajan |
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| 作者单位： | Applied Materials Inc., 3050 Bowers Ave., Santa Clara, CA 95054 |
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| 摘 要： | 1. Introduction The requirement of minimal bottom coverageand thick sidewall coverage for PVD-based films forlow via resistance and improved stress migration isnot easy to achieve with traditional depositionmethods. Modern I-PVD techniques give high bot-tom coverage, due to the ionized component of thedeposition flux. Sidewall coverage tends to be low,which is mainly due to off-normal deposition fluxand a less than unity sticking coefficient.
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| 关 键 词： | 半导体制备工艺 双镶嵌铜互联 0.13微米器件 PVD ALD 阻挡层 |
Advanced Engineering of PVD and ALD based Barriers for Submicron Device Generations in Dual Damascene Copper Interconnects |
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| Prabu Gopalraja,Suraj Rengarajan,John Forster,Xianmin Tang,Rahul Jauhari,Umesh Kelkar,Anthony Chan,Marc Schweitzer,Keith Miller,Ajay Bhatnagar,Nirmalya Maity,Jim Van Gogh,Suketu Parikh,Hua Chung.Advanced Engineering of PVD and ALD based Barriers for Submicron Device Generations in Dual Damascene Copper Interconnects[J].Semiconductor Technology,2003,28(4):42-46. |
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| Authors: | Prabu Gopalraja Suraj Rengarajan John Forster Xianmin Tang Rahul Jauhari Umesh Kelkar Anthony Chan Marc Schweitzer Keith Miller Ajay Bhatnagar Nirmalya Maity Jim Van Gogh Suketu Parikh Hua Chung |
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