Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures |
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Authors: | Engin Arslan Yasemin ?afak Habibe Uslu |
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Affiliation: | a Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey b Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara, Turkey |
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Abstract: | The dielectric properties and AC electrical conductivity (σac)of the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε′), dielectric loss (ε′′), loss tangent (tanδ), σac and the real and imaginary part of the electric modulus (M′ and M′′) were found to be a strong function of frequency and temperature. A decrease in the values of ε′ and ε′′ was observed, in which they both showed an increase in frequency and temperature. The values of M′ and M′′ increase with increasing frequency and temperature. The σac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the ε′ and σac. |
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Keywords: | (Ni/Au)/AlxGa1&minus xN/AlN/GaN heterostructures Dielectric properties AC electrical conductivity Electric modulus Passivation |
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