Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature |
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| Authors: | J. B. Wang K. Li X. L. Zhong Y. C. Zhou X. S. Fang C. C. Tang Y. Bando |
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| Affiliation: | (1) Institute of Modern Physics, Xiangtan University, 411105 Xiangtan, Hunan, China;(2) Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, 411105 Xiangtan, Hunan, China;(3) Nanoscale Materials Center, National Institute for Materials Science, Tsukuba 3050047, Japan |
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| Abstract: | The field emission properties of SnO2 nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2 nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2 nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2 nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2 at the same applied electric field of 5.0 V/μm. |
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| Keywords: | SnO2nanowires Chemical vapor deposition Field emission Annealing |
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