Solid source MBE growth of quantum cascade lasers |
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Authors: | Feng-Qi Liu Lu Li Lijun Wang Junqi Liu Wei Zhang Quande Zhang Wanfeng Liu Quanyong Lu and Zhanguo Wang |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of Wisconsin, Madison, 1415 Engineering Dr, Madison, WI 53706-1691, USA |
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Abstract: | High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy
(MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions,
layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal
x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality
laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated. |
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