| Au／a—Ge双层膜分形晶化及其V—I非线性研究 |
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| 引用本文： | 陈志文 张庶元. Au／a—Ge双层膜分形晶化及其V—I非线性研究[J]. 电子显微学报, 1997, 16(4): 447-448 |
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| 作者姓名： | 陈志文 张庶元 |
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| 作者单位： | 中国科学技术大学结构分析开放研究实验室 |
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| 摘 要： | 本文报道了Ａｕ／ａ－Ｇｅ双层膜的分形晶化现象，测量了Ａｕ／ａ－Ｇｅ双层膜在分形晶化后的Ｖ－Ｉ特性。实验结果表明：Ｗ发形晶化后的Ａｕ／Ａ－Ｇｅ双层膜具有反常的非线性Ｖ－Ｉ特生，应用隧道结网络（ＲＴＪＮ）。模型对该合理的解释。
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| 关 键 词： | 分形晶化 分形维数 V－I特征 半导体薄膜技术 |
Study of Nonlinear V I Characteristic of Fractal Crystallization in Au/a Ge Bilayer Film |
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| Z.W.Chen S.Y.Zhang S.Tan F.Q.Li M.L.Tian. Study of Nonlinear V I Characteristic of Fractal Crystallization in Au/a Ge Bilayer Film[J]. Journal of Chinese Electron Microscopy Society, 1997, 16(4): 447-448 |
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| Authors: | Z.W.Chen S.Y.Zhang S.Tan F.Q.Li M.L.Tian |
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| Abstract: | The fractal crystallization phenomenon of the Au/a Ge bilayer film has been investigated, and the V I characteristic for the film have been measured for the first time. The experimental evidence suggest that Au/a Ge film after fractal crystallization have nonlinear V I characteristic. The phenomenon was explained by the Random Tunneling Junction Network model (RTJN model). |
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| Keywords: | fractal crystallization fractal dimension nonlinear V I characteristic |
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