Influence of silver concentration in Agx(Sb0.33S0.67)100−x thin amorphous films on photoinduced crystallization |
| |
| Affiliation: | 1. Department of General and Inorganic Chemistry, Research Centre LC 523, Legion sq. 565, University of Pardubice, 53210 Pardubice, Czech Republic;2. Institute of Inorganic Chemistry, AS CR, 25068 Rez near Prague, Czech Republic;3. Joint Laboratory of Solid State Chemistry of University of Pardubice and Institute of Macromolecular Chemistry AS CR, Studentska 84, 53210 Pardubice, Czech Republic;4. Department of Electrical Engineering, University of Saskatchewan, Campus Drive 57, Saskatoon, Canada S7N 5A9;1. Department of Physics, Indian Institute of Science, Bangalore, India;2. Department of Material Science and Engineering, Lehigh University, Bethlehem, PA, USA;3. Alfred University, New York State College of Ceramics, Alfred, NY, USA;4. Corning Incorporated, Corning, NY, USA;5. Department of Instrumentation, Indian Institute of Science, Bangalore, India;6. Materials Research Centre, Indian Institute of Science, Bangalore, India |
| |
| Abstract: | One of the recent applications of thin chalcogenide films is in rewritable optical data recording. This technology is based on reversible phase transition between crystalline and amorphous state. Currently, the primary materials for rewritable optical are Ge–Sb–Te and Ag–In–Sb–Te alloys, but materials research still continues due to the need for increased storage capacity and data recording rates. (Ag)–Sb–S thin films were prepared by thermal evaporation of Sb33S67 bulk and optically induced diffusion and dissolution of thermally evaporated Ag films. Prepared samples were characterized by electron microprobe (SEM-EDX), differential scanning calorimetry (DSC) and by UV–Vis–NIR and Raman spectroscopy. The phase-change recording processes in (Ag)–Sb–S films were carried out by photocrystallization experiments done by Ar+ ion laser. The laser exposed dots were studied by scanning electron microscopy (SEM) and transmission optical microscopy. Micro X-ray diffraction (μ-XRD) was used for the exposed dots crystallinity study. Photocrystallization kinetic curves (showing the dependence of optical transmission on laser exposure time) were also established. Crystallization mechanism of Agx(Sb0.33S0.67)100−x samples was discussed. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
