The study of the radiative lifetimes of 3pndF3 and 3pndD3 of Si I |
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| Authors: | Liang Liang WX Jiang Chao Zhou Ling Zhang |
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| Affiliation: | Department of Physics, Xi’an University of Architecture and Technology, Xi’an Shannxi 710055, People’s Republic of China |
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| Abstract: | The energy levels and lifetimes of 3pnd1F3 (n = 3-15) and 3pnd3D3 (n = 3-18) of neutral silicon are calculated and predicted by means of the multichannel quantum defect theory (MQDT). In addition, this paper corrects the assignment mistakes of 3pnd1F3, 3pnd3F3 for n > 8, and predicts many positions and lifetime values of the energy state which are not obtained in theory and experiment up to now, and analyzes the perturbation images between the channels. |
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| Keywords: | 020 5870 020 2930 |
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