| 超大规模集成电路制造中硅片化学机械抛光技术分析 |
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| 引用本文： | 苏建修,康仁科,郭东明. 超大规模集成电路制造中硅片化学机械抛光技术分析[J]. 半导体技术, 2003, 28(10): 27-32 |
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| 作者姓名： | 苏建修 康仁科 郭东明 |
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| 作者单位： | 大连理工大学机械工程学院,辽宁,大连,116024 |
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| 基金项目： | 国家自然科学基金重大项目资助(50390061) |
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| 摘 要： | 目前半导体制造技术已经跨入0.13μm 和300mm时代,化学机械抛光(CMP)技术在ULSI制造中得到了快速发展,已经成为特征尺寸0.35μm以下IC制造不可缺少的技术。CMP是唯一能够实现硅片局部和全局平坦化的方法,但CMP的材料去除机理至今还没有完全理解、CMP系统过程变量和技术等方面的许多问题还没有完全弄清楚。本文着重介绍了化学机械抛光材料去除机理以及影响硅片表面材料去除率和抛光质量的因素。
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| 关 键 词： | 化学机械抛光 材料去除机理 CMP系统过程变量 |
| 文章编号： | 1003-353X(2003)10-0027-06 |
Technology analysis of wafer chemical mechanical polishing in the manufacture of ULSI |
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| SU Jian-xiu,KANG Ren-ke,GUO Dong-ming. Technology analysis of wafer chemical mechanical polishing in the manufacture of ULSI[J]. Semiconductor Technology, 2003, 28(10): 27-32 |
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| Authors: | SU Jian-xiu KANG Ren-ke GUO Dong-ming |
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| Abstract: | Presently the semiconductor manufacturing technology has been entered the age of 0.13mmand 300mm. Chemical mechanical polishing has been widely used in the manufacture of ULSI and becomethe indispensable technology of feature size below 0.35mm in IC manufacturing. Chemical mechanicalpolishing is a solitary technology planarizing the wafer with local and global planarization, but the materialremoval mechanism of wafer CMP and the problems on process variables and technologies of CMP systemare not fully understood. In the paper, the material removal mechanism and factors of influencing materialremoval rate and wafer surface quality, in wafer CMP, are mainly introduced. |
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| Keywords: | chemical mechanical polishing material removal mechanism process variables ofCMP system |
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