| 不同基区掺杂浓度NPN双极晶体管电离辐照效应 |
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| 引用本文： | 席善斌,陆妩,郑玉展,许发月,周东,李明,王飞,王志宽,杨永晖. 不同基区掺杂浓度NPN双极晶体管电离辐照效应[J]. 原子能科学技术, 2010, 44(Z1): 533-537. DOI: 10.7538/yzk.2010.44.suppl.0533 |
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| 作者姓名： | 席善斌 陆妩 郑玉展 许发月 周东 李明 王飞 王志宽 杨永晖 |
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| 作者单位： | 1. ;中国科学院 ;新疆理化技术研究所，新疆 ;乌鲁木齐 ;830011；2. ;新疆电子信息材料与器件重点实验室，新疆 ;乌鲁木齐 ;830011；3. ;中国科学院研究生院，北京 ;100049；4. ;模拟集成电路国家重点实验室，重庆 ;400060 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管，在不同剂量率条件下进行60Coγ辐照效应和退火特性研究。结果显示，晶体管基区掺杂浓度不同，对高、低剂量率的辐照响应也不相同，低基区掺杂浓度的晶体管辐照损伤明显高于高基区掺杂浓度的晶体管。
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| 关 键 词： | NPN双极晶体管, 60Coγ辐照')" >60Coγ辐照, 基区掺杂浓度, 低剂量率辐照损伤增强效应 |
Radiation Effect of NPN BJTs Under Various Base Doping Conditions |
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| XI Shan-bin,LU Wu,ZHENG Yu-zhan,XU Fa-yue,ZHOU Dong,LI Ming,WANG Fei,WANG Zhi-kuan,YANG Yong-hui. Radiation Effect of NPN BJTs Under Various Base Doping Conditions[J]. Atomic Energy Science and Technology, 2010, 44(Z1): 533-537. DOI: 10.7538/yzk.2010.44.suppl.0533 |
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| Authors: | XI Shan-bin LU Wu ZHENG Yu-zhan XU Fa-yue ZHOU Dong LI Ming WANG Fei WANG Zhi-kuan YANG Yong-hui |
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| Affiliation: | 1. Xinjiang Technical Institute of Physics & Chemistry，Chinese Academy of Sciences, Urumqi 830011, China；2. Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China；3. Graduate University of Chinese Academy of Sciences, Beijing 100049, China；4. National Key Laboratory of Analog Integrated Circuit, Chongqing 400060, China |
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| Abstract: | 60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors. |
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| Keywords: | NPN bipolar transistor 60Co γ irradiation base doping concentration enhanced low dose rate sensitivity |
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