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Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate |
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| Authors: | D. K. Sengupta M. B. Weisman M. Feng S. L. Chuang Y. C. Chang L. Cooper I. Adesida I. Bloom K. C. Hsieh W. Fang J. I. Malin A. P. Curtis T. Horton G. E. Stillman S. D. Gunapala S. V. Bandara F. Pool J. K. Liu M. McKelvey E. Luong W. Hong J. Mumolo H. C. Liu W. I. Wang |
| Affiliation: | (1) Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 61801 Urbana, IL;(2) Department of Physics, University of Illinois at Urbana-Champaign, 61801 Urbana, IL;(3) Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 61801 Urbana, IL;(4) Center for Space Microelectronics Technology, jet Propulsion Laboratory, California Institute of Technology, 91109 Pasadena, CA;(5) Institute of Microstructural Sciences, National Research Council, K1A 0R6, Canada;(6) Department of Electrical Engineering, Columbia University, 11007 New York, NY;(7) Present address: Jet Propulsion Laboratory, Pasadena, CA;(8) Present address: Department of Electrical Engineering, Technion, Haifa, Israel;(9) Texas Instruments, Inc., Dallas, TX;(10) Present address: Uniphase Telecommunications Products, Bloomfield, CT |
| Abstract: | We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown by metalorganic chemical vapor deposition (MOCVD). Important issues for QWIP application such as dark current, spectral response, and absolute responsivity were measured. We find that the detector structure grown on a GaAs-on-Si substrate exhibits comparable dark current and absolute responsivity and a small blue shift in the spectral response. This is the first demonstration of long wavelength GaAs/AlGaAs quantum well infrared photodetector using MOCVD grown GaAs-on-Si substrate and the performance is comparable to a similar detector structure grown on a GaAs substrate. |
| Keywords: | Dark current characteristics peak response wavelength rapid thermal annealing quantum efficiency quantum well infrared photodetectors (QWIPs) |
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