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热丝法制备硅纳晶颗粒及其发光性质
引用本文:孙世菊,胡亦,韩伟. 热丝法制备硅纳晶颗粒及其发光性质[J]. 微纳电子技术, 2011, 48(9): 573-576. DOI: 10.3969/j.issn.1671-4776.2011.09.006
作者姓名:孙世菊  胡亦  韩伟
作者单位:北京电子科技职业学院电信工程学院,北京,100015
摘    要:利用热丝化学气相沉积法,在真空腔中通过选择设定不同加热功率的热丝热解硅烷制备出一系列不同颗粒尺寸的硅纳米颗粒样品。透射电镜分析表明硅纳米颗粒具有结晶良好的纳晶结构。通过自然氧化钝化硅纳米颗粒表面,消除表面悬键的影响,使得硅颗粒具有高效的光致发光特性,发光范围在红光到近红外区,发光特性与量子限域效应相吻合。发光寿命测量表明所制备的硅颗粒的发光寿命在微秒量级,并且通过比较不同硅颗粒分布样品中相同发光波长衰减寿命的差异,揭示了所制备样品中硅纳米颗粒之间存在耦合作用。

关 键 词:热丝化学气相沉积  硅纳米颗粒  光致发光  量子限域效应  衰减寿命

Synthesis of Silicon Nanocrystals by HFCVD and Their Photoluminescence
Sun Shiju,Hu Yi,Han Wei. Synthesis of Silicon Nanocrystals by HFCVD and Their Photoluminescence[J]. Micronanoelectronic Technology, 2011, 48(9): 573-576. DOI: 10.3969/j.issn.1671-4776.2011.09.006
Authors:Sun Shiju  Hu Yi  Han Wei
Affiliation:(School of Telecommunication Engineering,Beijing Vocational College of Electronic Science and Technology,Beijing 100015,China)
Abstract:Using the hot filament chemical vapor deposition(HFCVD) method,through choosing hot wires with different heating power to pyrolyze silane in the vacuum cavity,a series of diffe-rent particle sizes for the silicon nanocrystals(NCs) samples were prepared.The analysis of the transmission electron microscopy(TEM) shows that the NCs have the nanocrystal structure with good crystallization.Through the natural oxidation passivation of silicon NCs surface to eliminate the effect of dangling bonds,the silicon particles have high efficient photoluminescence characteristics,and the luminous range is from the red light to near infrared,the luminescence characteristic is consistent with the quantum confinement effect.The shine life measurement shows that the shine life of the prepared silicon NCs is in microseconds magnitude.The coupling effect of the prepared silicon NCs samples was revealed by comparing the difference of the decay time at the same wavelength in different silicon particles distribution samples.
Keywords:hot filament chemical vapor deposition(HFCVD)  silicon nanocrystal(NC)  photoluminescence  quantum confinement effect  decay time
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