MOVPE growth of strained InGaAs/lnAIAs MQWs for a polarization-insensitive electroabsorption modulator |
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Authors: | S Kondo K Wakita Y Noguchi N Yoshimoto M Nakao K Nakashima |
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Affiliation: | (1) NTT Optoelectronics Laboratories, 3-1, Morinosato, Wakamiya, Atsugi, 243-01 Kanagawa, Japan |
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Abstract: | Metalorganic vapor phase epitaxial growth of a strained InGaAs/lnAIAs multiquantum well (MQW) structure was carried out for
optical electroabsorption modulators. A high-quality MQW layer can be grown by introducing compressive strain into InAlAs
barrier layers against tensile-strained well layers. We have also demonstrated strained InGaAs/lnAIAs MQW electroabsorption
modulators with polarization insensitivity by using these layers and have obtained a highquality modulator with a low driving
voltage of 1.7 V and a wide 3-dB bandwidth of over 20 GHz. |
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Keywords: | InGaAs/lnAIAs metalorganic vapor phase epitaxy (MOVPE) modulator multi-quantum well (MQW) polarization-insensitive strained MQW |
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