| 稀磁半导体的研究进展 |
| |
| 引用本文： | 赵建华,邓加军,郑厚植.稀磁半导体的研究进展[J].物理学进展,2007,27(2):109-150. |
| |
| 作者姓名： | 赵建华 邓加军 郑厚植 |
| |
| 作者单位： | 中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 |
| |
| 基金项目： | 国家自然科学基金;国家自然科学基金 |
| |
| 摘 要： | 本文主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其它稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。
|
| 关 键 词： | 半导体自旋电子学 稀磁半导体 异质结构 自旋注入 |
| 文章编号： | 1000-0542（2007）02-0109-42 |
| 收稿时间： | 2007-03-20 |
| 修稿时间： | 2007-03-20 |
DILUTED MAGNETIC SEMICONDUCTORS |
| |
| ZHAO Jian-hua,DENG Jia-jun,ZHENG Hou-zhi.DILUTED MAGNETIC SEMICONDUCTORS[J].Progress In Physics,2007,27(2):109-150. |
| |
| Authors: | ZHAO Jian-hua DENG Jia-jun ZHENG Hou-zhi |
| |
| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China |
| |
| Abstract: | This article mainly reviews growth and properties of III-V diluted magnetic semiconductor (Ga,Mn)As and its heterostructures, including structural, magnetic, magnetotransport, magneto-optical characteristics, origin of ferromagnetism and spin injection. Moreover, progress in other groups, like IV, III-VI and IV-VI diluted magnetic semiconductors is also briefly presented. The article concludes with an outlook on ideal diluted magnetic semiconductors. |
| |
| Keywords: | semiconductor spintronics diluted magnetic semiconductor hetero-structure spin injection |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
