Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers |
| |
| Authors: | N.C. Frateschi J. Zhang R. Jambunathan W.J. Choi C. Ebert A.E. Bond |
| |
| Affiliation: | Inst. de Fisica "Gleb Wataghin", Univ. Estadual de Campinas, Sao Paulo, Brazil; |
| |
| Abstract: | Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAs-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80/spl deg/C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence. |
| |
| Keywords: | |
|
|
