Terahertz emission at impurity electrical breakdown in Si(Li) |
| |
| Authors: | A. V. Andrianov A. O. Zakhar’in R. Kh. Zhukavin V. N. Shastin D. V. Shengurov N. V. Abrosimov |
| |
| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Institute for Physics of Microstructures,Afonino, Nizhny Novgorod oblast’,Russia;3.Lobachevsky State University of Nizhny Novgorod,Nizhny Novgorod,Russia;4.Leibniz Institute for Crystal Growth,Berlin,Germany |
| |
| Abstract: | Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
