| COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs |
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| 引用本文： | 张义门,滕建旭. COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs[J]. 电子科学学刊(英文版), 1992, 9(1): 76-82. DOI: 10.1007/BF02778596 |
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| 作者姓名： | 张义门 滕建旭 |
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| 作者单位： | Xidian University Xi'an 710071，Xidian University，Xi'an 710071 |
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| 摘 要： | The two-dimensional numerical simulation of energy transport for MOSFETs ispresented,in which the effect of generation,recombination and temperature gradient of carrierson the characteristics of devices are considered.An improved mobility model is also proposed.The numerical results of micron and submicron MOSFETs show that the present model fitsexperiment very well.
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Computer aided analysis of carrier energy transport in mosfets |
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| Zhang Yimen,Teng Jianxu. Computer aided analysis of carrier energy transport in mosfets[J]. Journal of Electronics, 1992, 9(1): 76-82. DOI: 10.1007/BF02778596 |
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| Authors: | Zhang Yimen Teng Jianxu |
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| Affiliation: | (1) Xidian University, 710071 Xi’an |
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| Abstract: | The two-dimensional numerical simulation of energy transport for MOSFETs is presented,in which the effect of generation,recombination and temperature gradient of carriers on the characteristics of devices are considered.An improved mobility model is also proposed. The numerical results of micron and submicron MOSFETs show that the present model fits experiment very well. |
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| Keywords: | MOSFET Energy Transport Mobility Numerical Simulation CAD |
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