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Pressure-induced semiconductor–metal phase transition in Mg2Si
Authors:Wanbin Ren  Yonghao Han  Cailong Liu  Ningning Su  Yan Li  Boheng Ma  Yanzhang Ma  Chunxiao Gao
Affiliation:1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China;2. School of Sciences, Liaoning Shihua University, Liaoning Fushun 113001, PR China;3. A James Clark School of Engineering, University of Maryland, College Park, MD 20742, USA;4. Department of Mechanical Engineering, Texas Tech University, Lubbock, TX 79409, USA;1. GNS Science, Lower Hutt, New Zealand;2. The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand;3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany;4. RUBION, Ruhr-University Bochum, Germany;1. Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8626, Japan;2. Tokyo Denki University, Hatoyama, Hiki-gun, Saitama 350-0394, Japan;3. University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan;4. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;1. Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco;2. Centro Brasileiro de Pesquisas Fisicas (CBPF), Rua Dr. Xavier Sigaud, 150 Urca, Rio de Janeiro, Brazil;1. Instituto Tecnológico de Apizaco, Av. Instituto Tecnológico S/N, CP 90300, Apizaco, Tlaxcala, Mexico;2. Facultad de Ciencias Químicas, Benemérita Universidad Autónoma de Puebla, 14 Sur y Ave. San Claudio, CP 72570, Puebla, Pue., Mexico;3. Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, 72570, Puebla, Pue., Mexico;4. Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco 186, 09340 México, DF, Mexico;1. Faculty of Science, UOIT, Oshawa, ON L1H 7K4, Canada;2. Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, United Kingdom
Abstract:In situ electrical resistivity measurement of powdered Mg2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg2Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.
Keywords:
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