Free-carrier absorption in quantum well structures for acoustic phonon scattering |
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| Affiliation: | 1. School of Mechanical Engineering, Chengdu University, Chengdu 610106, China;2. School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China;3. School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China;1. Smart Materials Interface Laboratory, Department of Physics, Periyar University, Salem 636 011, Tamilnadu, India;2. Key Laboratory of Advanced Materials for Energy and Environmental Applications, Lac Hong University, Dong Nai 810000, Viet Nam;3. Electrical and Electronics Department, Lac Hong University, Dong Nai 810000, Viet Nam;4. Institute of Research and Development, Duy Tan University, Da Nang 550000, Viet Nam;5. University of Science, Vietnam National University – Ho Chi Minh City, Ho Chi Minh City 700000, Viet Nam;6. School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331, USA;1. Department of Instrumentation, Cochin University of Science & Technology, Cochin 682 022, India;2. Department of Electronics and Communication, Mar Athanasius College of Engineering, Kothamangalam 686666, India;3. Amal Jyothi College of Engineering, Kanjirappally, Kottayam 686518, India;1. Department of Instrumentation, Cochin University of Science &Technology, Cochin 682 022, India;2. Department of Electronics and Communication, Mar Athanasius College of Engineering, Kothamangalam 686666, India;3. Amal Jyothi College of Engineering, Kanjirappally, Kottayam 686518, India |
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| Abstract: | Free-carrier absorption has been studied for quantum well structures fabricated from III-V semiconducting materials where the acoustic phonon scattering is important. The energy band of carriers is assumed to be nonparabolic. We discuss the effect of acoustic phonon scattering on the free-carrier absorption for both deformation-potential coupling and piezoelectric coupling. It is found that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the layer plane or quantum well, the photon frequency, and the temperature. When the deformation-potential coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane or perpendicular to the layer plane. However, when the piezoelectric coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane, but for photons polarized perpendicularly to the layer plane, the free-carrier absorption coefficient decreases with increasing temperature. Moreover, at high temperatures such as T = 300 K, the free-carrier absorption coefficient oscillates with the film thickness in a small quantum well region and then decreases monotonically with increasing the film thickness. This is different from the result for three-dimensional semiconducting solids. |
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