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Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth |
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| Authors: | Koh Matsumoto Kazutada Ikenaga Jun Yamamoto Kazuki Naito Yoshiki Yano Akinori Ubukata Hiroki Tokunaga Tadanobu Arimura Katsuaki Cho Toshiya Tabuchi Akira Yamaguchi Yasuhiro Harada Yuzaburo Ban Kousuke Uchiyama |
| Affiliation: | 1. TN-EMC Ltd, 2008-2 Wada, Tama, Tokyo 206-0001, Japan 2. Business Strategy Planning div. Electronics Group, TAIYO NIPPON SANSO Corporation, 10 Okubo,Tsukuba 300-2611, Japan 3. Compound-semiconductor Division, TAIYO NIPPON SANSO Corp., 6-2 Kojimacho, Kawasaki-shi, 210-0861, Japan |
| Abstract: | Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al0.1Ga0.9N growth of 1 μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed. |
| Keywords: | MOVPE GaN:AlGaN atmospheric pressure growth high growth rate |
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