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Z扫描法研究nc-Si/SiN_x多量子阱材料非线性光学特性
引用本文:沈海波,郭亨群,王国立,王加贤,吴志军,宋江婷,徐骏,陈坤基,王启明. Z扫描法研究nc-Si/SiN_x多量子阱材料非线性光学特性[J]. 半导体光电, 2009, 30(6): 878-882
作者姓名:沈海波  郭亨群  王国立  王加贤  吴志军  宋江婷  徐骏  陈坤基  王启明
作者单位:华侨大学,信息科学与工程学院,福建,泉州,362021;华侨大学,信息科学与工程学院,福建,泉州,362021;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;南京大学,物理学系,南京,210093;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083
基金项目:国家自然科学基金,国家重点基础研究发展规划(973计划),集成光电子国家联合重点实验室开放课题,国家自然科学基金重点项目,华侨大学科研基金
摘    要:采用射频磁控反应溅射技术与热退火处理制备了nc-Si/SiN_x多量子阱材料.对样品进行了小角度XRD、Raman光谱、吸收光谱测试,研究了其结构和光学性质.采用皮秒脉冲激光单光束Z-扫描技术研究了样品在非共振吸收区的三阶非线性光学特性.实验结果表明,其非线性折射率为负值,非线性吸收属于双光子吸收.由实验数据计算得材料三阶非线性极化率为7.50×10~(-8)esu,该值比体硅材料的三阶非线性极化率大4个数量级.对材料光学非线性产生的机理进行了探讨,认为材料的非线性极化率的增加来源于材料量子限制效应增强.
Abstract:
The nc-Si/SiN_x multi-quantum well (MQW)was prepared by RF magnetron sputtering technique and thermal annealing. The sample was tested by low-angle XRD, Raman spectrometry and absorption spectrometry, and its structure and optical properties were studyed. Nonlinear optical properties of nc-Si/SiN_x MQW were probed by a Z-Scan Technique. The experimental results show that the nonlinear refractive index of the sample is a negative value and the nonlinear absorption is two-photon absorption. After calculating, it is obtained that X~((3)) of the sample is 7.50 10~(-8)esu, the value of nc-Si/SiN_x MQW is 4 orders of magnitude higher than that of bulk Silicon. The nonlinear mechanism of the material was discussed. The enhancement of nonlinear refractive index is mainly attributed to the enhancement of quantum confinement.

关 键 词:nc-Si/SiN_x多量子阱材料  Z-扫描  非线性折射率  非线性吸收

Study on Non-linear Optical Properties of nc-Si/SiN_x MQW with Z-scan Method
SHEN Hai-bo,GUO Heng-qun,WANG Guo-li,WANG Jia-xian,WU Zhi-jun,SONG Jiang-ting,XU Jun,CHEN Kun-ji,WANG Qi-ming. Study on Non-linear Optical Properties of nc-Si/SiN_x MQW with Z-scan Method[J]. Semiconductor Optoelectronics, 2009, 30(6): 878-882
Authors:SHEN Hai-bo  GUO Heng-qun  WANG Guo-li  WANG Jia-xian  WU Zhi-jun  SONG Jiang-ting  XU Jun  CHEN Kun-ji  WANG Qi-ming
Abstract:The nc-Si/SiN_x multi-quantum well (MQW)was prepared by RF magnetron sputtering technique and thermal annealing. The sample was tested by low-angle XRD, Raman spectrometry and absorption spectrometry, and its structure and optical properties were studyed. Nonlinear optical properties of nc-Si/SiN_x MQW were probed by a Z-Scan Technique. The experimental results show that the nonlinear refractive index of the sample is a negative value and the nonlinear absorption is two-photon absorption. After calculating, it is obtained that X~((3)) of the sample is 7.50 10~(-8)esu, the value of nc-Si/SiN_x MQW is 4 orders of magnitude higher than that of bulk Silicon. The nonlinear mechanism of the material was discussed. The enhancement of nonlinear refractive index is mainly attributed to the enhancement of quantum confinement.
Keywords:nc-Si/SiN_x MQW  Z-Scan  nonlinear refractive index  nonlinear absorption
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