| AllnAs/InP异质隧道结的设计与器件应用 |
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| 引用本文： | 刘成,曹春芳,劳燕锋,曹萌,吴惠桢. AllnAs/InP异质隧道结的设计与器件应用[J]. 半导体光电, 2009, 30(5): 691-695,699 |
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| 作者姓名： | 刘成 曹春芳 劳燕锋 曹萌 吴惠桢 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050;上海空间电源研究所,上海,200233;中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 |
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| 基金项目： | 国家重点基础研究发展规划(973计划) |
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| 摘 要： | 应用高掺杂pn结和异质结能带理论,计算了AllnAs/InP异质隧道结的电学特性,发现其性能优于AllnAS和InP同质隧道结,并得出了掺杂浓度与隧道电流的关系曲线.采用气态源分子束外延(GSMBE)设备生长了面电阻率约为10~(-4)Ω·cm~2的AllnAs/InP异质隧道结结构,并应用于制作1.3μm垂直腔面发射激光器(VCSEL),器件在室温下脉冲激射.Abstract：By using high doping pn junction and heterojunction energy band model,electrical properties of AlInAs/InP tunnel junction are calculated.It is found that AlInAs/InP hetero-tunnel junction is superior to AlInAs or InP homo-tunnel junction,and the influence of doping level on the tunneling current is discussed.AlInAs/InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) with the specific contact resistivity of about 10~(-4) Ω·cm~2.Then such structures are adopted in the fabrication of 1.3 μm vertical-cavity surface-emitting lasers(VCSEL).
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| 关 键 词： | 异质隧道结 垂直腔面发射激光器 光电特性 |
Design of AlInAs/InP Tunnel Junction and Its Application in Devices |
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| LIU Cheng,CAO Chun-fang,LAO Yan-feng,CAO Meng,WU Hui-zhen. Design of AlInAs/InP Tunnel Junction and Its Application in Devices[J]. Semiconductor Optoelectronics, 2009, 30(5): 691-695,699 |
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| Authors: | LIU Cheng CAO Chun-fang LAO Yan-feng CAO Meng WU Hui-zhen |
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| Abstract: | By using high doping pn junction and heterojunction energy band model,electrical properties of AlInAs/InP tunnel junction are calculated.It is found that AlInAs/InP hetero-tunnel junction is superior to AlInAs or InP homo-tunnel junction,and the influence of doping level on the tunneling current is discussed.AlInAs/InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) with the specific contact resistivity of about 10~(-4) Ω·cm~2.Then such structures are adopted in the fabrication of 1.3 μm vertical-cavity surface-emitting lasers(VCSEL). |
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| Keywords: | tunnel junction VCSEL optoelectronic properties |
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