| 无限微元法求霍尔槽初级电流分布 |
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| 引用本文： | 张昭 刘毅强. 无限微元法求霍尔槽初级电流分布[J]. 电镀与环保, 1999, 19(4): 12-15 |
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| 作者姓名： | 张昭 刘毅强 |
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| 作者单位： | 中南工业大学 |
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| 摘 要： | 使用无限微元法对霍尔槽阴极初级电流分布进行了理论探讨,推导出霍尔槽阴极初级电流分布公式为：Ｄｋ＝Ｉｍ（Ａ＋Ｂｌｇ（Ｌｓｉｎθ＋α））,公式所得结果能正确解释电镀生产中的一些因素对镀层质量的影响,并对非直流电镀具有一定的指导意义。
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| 关 键 词： | 霍尔槽 无限微元法 初级电流分布 电镀 质量 |
Primary Current Distribution in Hull Cell Using Infinitesimal Element Method |
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| ZHANG Zhao et al. Primary Current Distribution in Hull Cell Using Infinitesimal Element Method[J]. Electroplating & Pollution Control, 1999, 19(4): 12-15 |
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| Authors: | ZHANG Zhao et al |
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| Affiliation: | ZHANG Zhao et al |
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| Abstract: | Infinitesimal element method is used to theoretically study cathode primary current distribution in Hull Cell. Dependence between cathode primary current density (Dk) and distance from certain point to cathodic close point(L) can be deduced as Dk=Im . Results can properly explain effect of some parameters on quality of electrodeposition, and can give some instruction to electrodeposit by indirect current. |
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| Keywords: | Hull CellInfinitesimal element methodPrimary current distribution |
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