| 193 nm光刻散射条技术研究 |
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| 引用本文： | 康晓辉,张立辉,范东升,王德强,谢常青,刘明.193 nm光刻散射条技术研究[J].微电子学,2005,35(4):360-363. |
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| 作者姓名： | 康晓辉 张立辉 范东升 王德强 谢常青 刘明 |
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| 作者单位： | 中国科学院,微电子研究所,纳米加工与新器件集成技术实验室,北京,100029 |
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| 基金项目： | 国家自然科学基金资助项目（60376020） |
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| 摘 要： | 介绍了193nm光刻中的散射条技术，并利用标量衍射和傅里叶光学理论，对掩模和光瞳平面上衍射图形的空间频率进行了深入的分析，从理论上解释了散射条的工作原理。通过商用光刻模拟软件PROLITH，对散射条的参数进行了优化，并总结出193nm光刻中孤立线散射条的优化方法。
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| 关 键 词： | 光刻 亚分辨率辅助图形 散射条 离轴照明 分辨率增强 光学临近效应校正 |
| 文章编号： | 1004-3365（2005）04-0360-04 |
| 收稿时间： | 2004-09-13 |
| 修稿时间： | 2004-09-13 |
A Study on Scattering Bar in 193 nm Lithography |
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| KANG Xiao-hui,ZHANG Li-hui,FAN Dong-sheng,WANG De-qiang,XIE Chang-qing,LIU Ming.A Study on Scattering Bar in 193 nm Lithography[J].Microelectronics,2005,35(4):360-363. |
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| Authors: | KANG Xiao-hui ZHANG Li-hui FAN Dong-sheng WANG De-qiang XIE Chang-qing LIU Ming |
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| Abstract: | Assist bars are a proven effective optical proximity correction technique that enhances wafer imaging performance for current and future technology nodes. In this paper, mask and image properties are analyzed from a spatial frequency perspective, to explain how and why these assist features improve the image quality of isolated lines. In addition, using PROLITH, a program for lithography simulation, the optimal position and width of scattering bars in 193 nm lithography are found, and methods to optimize parameters of scattering bars to the isolated pattern are summarized. |
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| Keywords: | Lithography Sub-resolution assist features Scattering bar Off-axis illumination Resolution enhancement Optical proximity correction |
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