Effect of strain rate on the dynamic compressive mechanical behaviors of rock material subjected to high temperatures

Strain rate is not only an important measure to characterize the deformation property, but also an important parameter to analyze the dynamic mechanical properties of rock materials. In this paper, by using the SHPB test system improved with high temperature device, the dynamic compressive tests of sandstone at seven temperatures in the range of room temperature to 1000 °C and five impact velocities in the range of 11.0–15.0 m/s were conducted. Investigations were carried out on the influences of strain rate on dynamic compressive mechanical behaviors of sandstone. The results of the study indicate that the enhancement effects of strain rates on dynamic compressive strength, peak strain, energy absorption ratio of sandstone under high temperatures still exist. However, the increase ratios of dynamic compressive strength, peak strain, and energy absorption ratio of rock under high temperature compared to room temperature have no obvious strain rate effects. The temperatures at which the strain rates affect dynamic compressive strength and peak strain most, are 800, and 1000 °C, respectively. The temperatures at which the strain rates affect dynamic compressive strength and peak strain weakest, are 1000 °C, and room temperature, respectively. At 200 and 800 °C, the strain rate effect on energy absorption ratio are most significant, while at 1000 °C, it is weakest. There are no obvious strain rate effects on elastic modulus and increase ratio of elastic modulus under high temperatures. According to test results, the relationship formula of strain rate with high temperature and impact load was derived by internalizing fitting parameters. Compared with the strain rate effect at room temperature condition, essential differences have occurred in the strain rate effect of rock material under the influence of high temperature.     

Effects of apparent image velocity and complexity on the dynamic visual field using a high-speed train driving simulator

Train driving is a highly visual task. The visual capabilities of the train driver affects driving safety and driving performance. Understanding the effects of train speed and background image complexity on the visual behavior of the high-speed train driver is essential for optimizing performance and safety. This study investigated the role of the apparent image velocity and complexity on the dynamic visual field of drivers. Participants in a repeated-measures experiment drove a train at nine different speeds in a state-of-the-art high-speed train simulator. Eye movement analysis indicated that the effect of image velocity on the dynamic visual field of high-speed train driver was significant while image complexity had no effect on it. The fixation range was increasingly concentrated on the middle of the track as the speed increased, meanwhile there was a logarithmic decline in fixation range for areas surrounding the track. The extent of the visual search field decreased gradually, both vertically and horizontally, as the speed of train increased, and the rate of decrease was more rapid in the vertical direction. A model is proposed that predicts the extent of this tunnel vision phenomenon as a function of the train speed.Relevance to industryThis finding can be used as a basis for the design of high-speed railway system and as a foundation for improving the operational procedures of high-speed train driver for safety.     

Usability of a cloud-based collaborative learning framework to improve learners’ experience

Computer-Supported Collaborative Learning (CSCL) is concerned with how Information and Communication Technology (ICT) might facilitate learning in groups which can be co-located or distributed over a network of computers such as Internet. CSCL supports effective learning by means of communication of ideas and information among learners, collaborative access of essential documents, and feedback from instructors and peers on learning activities. As the cloud technologies are increasingly becoming popular and collaborative learning is evolving, new directions for development of collaborative learning tools deployed on cloud are proposed. Development of such learning tools requires access to substantial data stored in the cloud. Ensuring efficient access to such data is hindered by the high latencies of wide-area networks underlying the cloud infrastructures. To improve learners’ experience by accelerating data access, important files can be replicated so a group of learners can access data from nearby locations. Since a cloud environment is highly dynamic, resource availability, network latency, and learner requests may change. In this paper, we present the advantages of collaborative learning and focus on the importance of data replication in the design of such a dynamic cloud-based system that a collaborative learning portal uses. To this end, we introduce a highly distributed replication technique that determines optimal data locations to improve access performance by minimizing replication overhead (access and update). The problem is formulated using dynamic programming. Experimental results demonstrate the usefulness of the proposed collaborative learning system used by institutions in geographically distributed locations.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

无源光网络标准发展及关键技术研究

无源光网络(Passive Optical Network,PON)作为当今接入网的主要技术解决方案,具有带宽使用效率高、传输距离远、抗干扰能力强等特点.通过研究PON技术的发展动态,本文首先归纳了各种PON技术的产生背景和应用特点,整理出各技术间的连接关系及主要标准;其次介绍了PON技术的帧结构,并对带宽、波长、传输模式等PON技术的主要参数进行了汇总;然后将国内外研究热点进行划分,围绕媒体访问控制协议、帧结构、动态带宽分配算法、节能机制等关键技术,阐述了其研究现状及在PON中的重要作用;最后对PON技术的发展趋势进行了展望.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

Breakdown characteristics of oil and paper insulation for a very fast transient voltage

This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043