A 2‐in. a‐Si:H TFT‐LCD with embedded backlight control TFT sensors with various channel widths

Abstract— A 2.0‐in. a‐Si:H TFT‐LCD with embedded TFT sensors for the control of the backlight intensity according to the ambient light intensity has been developed. Two types of a‐Si:H TFT sensors with various channel widths were embedded into a TFT backplane with bottom‐ and top‐gate structures for measuring the ambient light and backlight illumination, respectively. The output signal, measured by a readout IC, increased with backlight intensity until 20,000 lux.     

DNA-CTMA/a-Si:H bio-hybrid photodiode: A light-sensitive photosensor

Recently, considerable interest have occurred in the development of an organic-inorganic-based bio-hybrid photodiodes (Bio-HPDs) with metal-free, eco-friendly, and cost-competitive features for light-sensitive devices. This paper reports a bio-inspired optical absorber material for the fabrication of Bio-HPDs using n-type hydrogenated amorphous silicon (a-Si:H) and a natural deoxyribonucleic acid (DNA)-cetyltrimethylammonium chloride (CTMA) biomaterial. a-Si:H is inexpensive and abundant, and DNA-CTMA is metal-free and eco-friendly. A DNA-CTMA coating on n-type a-Si:H leads to a chemically stable material with increased absorption and effective ties of dangling bonds and interface state density. Analysis results showed that the rectification ratio (RR) of the Bio-HPD is found to be 4 times higher than reference PD. This indicates that the effective RR is improved by the DNA-CTMA layer since it creates molecular charge interactions between DNA-CTMA layer and a-Si:H substrate. Moreover, Bio-HPD shows a light photosensitivity (I_photo/I_dark) of 474 with more reliable and has longer life time. In addition, the formation and feasible charge transport mechanisms are discussed. This biomaterial can be used for the development of commercially viable and environmentally safe large-scale Bio-HPDs applications.     

钢丝绳捻股机缺丝检测保护仪的原理与实现

钢丝绳捻股机缺丝检测保护仪在钢丝绳生产单位及相关生产单位的实际生产中是十分需要的。本文针对捻股机缺丝检测保护仪的传感器、测量方法、原理和在现场中需要注意的问题进行了较详细的分析和介绍。     

Digital image capture — Filmless camera technology and techniques

Summaries  The digital imaging revolution continues apace, affecting the whole spectrum of the photographic industry. In many part of the world digital cameras now outsell conventional film cameras, and many of the disadvantages associated with digital image capture in the very recent past^1.2 have been nulified. As the digital industry grows, the various technologies involved continue to be ever innovative. With respect to digital cameras, the image sensor performance criteria have improved immeasurably since the launch of the first solid-state camera in the early 1980s. The charge-coupled semiconductor device (CCD), for so long the unrivalled image-capture component in digital cameras, is now being challenged by complementary metal oxide semiconductor (CMOS) technology and the innovatively re-designed Fujifilm Super CCD. In addition, the recent introduction of the Foveon full-colour imaging sensor has added a new dimension to digital image capture. This paper reviews current image-capture sensors and the way that the various digital imaging camera designs are able to record and reproduce colour images.

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Techniques et technologie de l’appareil sans pellicule et a capteur d’image numérique

Résumé  La révolution provoquée par l’imagerie numérique devient de plus en plus importante et a une influence sur le spectre entier de l’industrie photographique. Il y a beaucoup d’endroits dans le monde ou l’on vend plus d’appareils photo numériques que d’appareils photo de tradition, et beaucoup des inconvenients qui étaient relatifs à la capture d’image numérique dans le passé recent récent ont été supprimés. Au fur et à mesure que l’industrie photographique s’accroft, les plusieurs technologies relatives continuent d’être de plus en plus innovatrices. Quant aux appareils photo numériques, les critères de la performance du capteur d’image ont amélioré infiniment depuis le lancement du premier appareil photo à semi-conducteurs tot dans les annees 80. Le dispositif à transfert de charges (CCD), depuis si longtemps le composant sans pareil en ce qui concerne la capture d’image, est remis en question par la technologie du métal-oxyde-semi-conducteur complémentaire (CMOS) et par le Fujifilm Super CDD qui a été repensé d’une manière tres innovatrice. En plus, l’introduction récente du capteur Foveon pour image couleur a ajouté une nouvelle dimension à la capture d’image numérique. Cet article examine les capteurs d’image courants aussi bien que la fa?on dont les plusieurs conceptions d’appareils photo à imagerie numérique sont capables d’enregistrer et de reproducire des images en couleur.

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Digitale Fotografie — Technologie und Technik der film-losen Kamera

Zusammenfassung  Die digitale Revolution geht weiter voran und hat das ganze Spektrum der fotografischen Industrie ergriffen. In vielen Teilen der Welt werden heute mehr digitale Kameras als konventionelle Filmkameras verkauft, und viele der anfaenglichen Nachteile der digitalen Bilderfassung bestehen heute nicht mehr. Viele Innovationen treiben die Digitalindustrie voran. Bei Digitalkameras hat sich die Bildsensorleistung von den ersten Modellen in den fruehen 80er Jahren enorm entwickelt. Die Charge-coupled Device (CCD), so lange der unangefochtene K?nig der digitalen Bilderfassung, bekommt heute von komplimentĂren Metalloxidhalbleitern (CMOS) und von der innovativ neu-entwickelten Fujifilm Super CCD Konkurrenz. Dazu hat die Einführung des Foveron Vollfarbbildsensors der Digitalfotografie eine neue Dimension verliehen. Diese Arbeit vergleicht die gegenwartigen Bilderfassungssensoren, und wie verschiedene Digitalkamera-Varianten Farbbilder aufnehmen und wiedergeben.

     

分子束外延生长液晶光阀用ZnSxSe1-x薄膜的研究

描述了ZnSxSe1-x光盲紫外液晶光阀的结构和工作原理 ,并从器件的电学模型出发 ,着重讨论了整体器件对ZnSxSe1-x光敏层的特殊要求。采用分子束外延技术在ITO导电玻璃上制备了具有 (111)面定向生长结构的ZnSxSe1-x多晶薄膜 ,通过控制反应时的生长参数 ,制备出了符合器件设计要求的光敏层薄膜。室温下 ,该薄膜的紫外 /可见光响应对比度大于10 3 ;响应波长截止边可通过控制薄膜中的Se组分 ,在 (36 0～ 4 10 )nm范围内连续可调 ;薄膜的暗电阻率在 (4 32× 10 9～ 2 0 3×10 11)Ω·m之间 ,并随着晶粒的增大而减小 ;在液晶光阀工作的低频段 (<2 0 0Hz) ,其光 /暗阻抗比在 0 2 2～ 0 36之间。     

高精度视觉光电多指节机器人中的零点归位新方法

提出了一种自动选择最优路径的高精度的机器人归零新方法,制作了高精度视觉光电多指节机器人系统。该归零方法的基本原理是根据机器人的停放点相对于零位接近开关的位置自动选择最近的归零路径,以零位接近开关和编码器Z信号共同判断最终零点。现场应用实验结果表明:项目组的视觉光电多指节机器人1轴臂长350mm,可操作范围220?;2轴臂长250mm,可操作范围300°;3轴臂长150mm;4轴360°自由转动。该机器人系统目前已成功应用于工件上下料和码垛作业中,系统运行稳定,点重复精度达0.02mm,除归零外的水平联动速度达到5.2m/s。采用本文的归零新方法,各轴归零时间均在10s内,归零误差均在2个脉冲数以内。据我们所知,该方法国内、外未见报道,也未见实际应用案例。     

紫外透射型液晶光阀用ZnSxSe1-x薄膜的研究

描述了透射型ZnS,Se1-x光盲紫外液晶光阀的结构和工作原理,并从器件的电学模型出发,着重讨论了整体器件对ZnSxSe1-,光敏层的特殊要求.采用分子束外延技术在ITO石英导电玻璃上制备了不同组分的三元ZnS,Se1-x多晶薄膜,通过控制反应时的生长参数,制备出了符合器件设计要求的光敏层薄膜.室温下,薄膜 的紫外/可见光响应对比度大于103,响应波长截止边可通过控制薄膜中的Se组分,在360～410nm范围内连续可调;薄膜的紫外/可见光吸收系数比大于103;在液晶光阀工作的低频段(＜200Hz),其暗阻抗在105～106Ωcm2之间;暗/亮阻抗比满足器件要求.     

基于单片机的液体点滴速度监控的研究

本文针对全国大学生电子设计大赛运动控制试题之一《液体点滴速度监控》的控制要求，提出了一种基于单片机和步进电机液滴自动监控的研究方法。考虑到控制的可靠性及精确性，在软件设计中使用TPID软件算法进行液滴速度的测算，形成一个闭环传递控制系统实现精确的控制。     

Determining photosensor settings for optimum energy saving of suspended lighting systems in a small double‐skinned office

A photoelectric dimming control system applied to a suspended direct/indirect and indirect lighting system was analyzed to determine effective control options in a small office with double‐skin envelope. Computer simulations were performed for photosensors positioned at three different locations with three specific configurations under three Commission Internationale de l'Élairage standard sky types. Optimum ideal dimming level was determined for each combination of room orientation, photosensor configurations and positions. In general, fully shielded photosensors achieved better control performance among other configurations used for the photosensors on the ceiling and the back wall. The effect of photosensor configurations on dimming system performance was as significant as the photosensor positions. As the penetration of daylight decreased due to the shaded area on the internal envelope, the control system performance deteriorated. The correlation between the photosensor signals and the desktop illuminance levels due to daylight was not significantly meaningful under the lighting systems. Lighting energy savings were determined for the best and good system control performance. Copyright © 2009 John Wiley & Sons, Ltd.     

Silicon‐nanocrystal‐based photosensor integrated on low‐temperature polysilicon panels

Abstract— A photodetector using a silicon‐nanocrystal layer sandwiched between two electrodes is proposed and demonstrated on a glass substrate fabricated by low‐temperature poly‐silicon (LTPS) technology. Through post excimer‐laser annealing (ELA) of silicon‐rich oxide films, silicon nanocrystals formed between the bottom metal and top indium thin oxide (ITO) layers exhibit good uniformity, reliable optical response, and tunable absorption spectrum. Due to the quantum confinement effect leading to enhanced phonon‐assisted excitation, these silicon nanocrystals, less than 10 nm in diameter, promote electron‐hole‐pair generation in the photo‐sensing region as a result resembling a direct‐gap transition. The desired optical absorption spectrum can be obtained by determining the thickness and silicon concentration of the deposited silicon‐rich oxide films as well as the power of post laser annealing. In addition to obtaining a photosensitivity comparable to that of the p‐i‐n photodiode currently used in LTPS technology, the silicon‐nanocrystal‐based photosensor provides an effective backlight shielding by the bottom electrode made of molybdenum (Mo). Having a higher temperature tolerance for both the dark current and optical responsibility and maximizing the photosensing area in a pixel circuit by adopting a stack structure, this novel photosensor can be a promising candidate for realizing an optical touch function on a LTPS panel.