Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.     

Hopping and optical absorption of electrons in nano-porous crystal 12CaO·7Al2O3

Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al₂O₃ (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media.     

Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping

We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er³⁺ ion are shown and discussed.     

光纤通信在市内接入网的应用

先说明市内接入网的单位用户和住家用户两大类使用通信和电视、交互型和分配型业务的要求不相同，相应地对光纤传输的应用须作不同的考虑，文中认为；光纤从市内交换局直连办公大楼是合乎现实需要的，而对于居民住家，宜选用光纤连至路边或光纤与同轴结合和适当利用无源光网络等方案，俟将来时机成熟才实行光纤连至每一家，文末有概括总结，说明接入网不同于长途网，接入网的光纤系统可以使用常规单模光纤，工作于波长1．3μm，而光放大器和波分多路系统不是普遍需要，但光电子集成在光端机中是必要的。     

由光率体求导折射率及振动方向的新方法

从光率体出发，利用坐标轴旋转，导出了光在晶体中传播时折射率及振动方向的公式。     

Motion and structure interpretation of an optical switch

This paper focuses on tracking, reconstruction and motion estimation of a well-defined MEMS optical switch from a microscopic view. For out-of-view reconstruction, a homography capable of transforming feature points and feature lines between a microscopic image and a CAD model of the switch is implemented. The homography between two sequential microscopic images is decomposed and factorized for motion estimation. Optical flow has also been explored to provide rough estimations of rotation centre and angle. The paper also illustrates motion parameter optimization principles to deal with uncertainty inherent in micro world. After non-linear optimization, estimation accuracy for rotation angle and rotation centre can reach 0.06° and pixel level, respectively.     

Effect of refraction on optical microscopic measurement of internal blood-vessel diameter and its correction

In optical microscopic measurement of internal blood-vessel diameters, the effect of refraction must be taken into account to ensure accuracy of the result. This effect is discussed and an analytical correction formula derived. Phantom blood vessels with known internal and external diameters were used to test the validity of the correction formula. The errors obtained prior to correction were reduced significantly after correction.     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Optical switching properties of RCo2-type alloy thin films by electrochemical hydrogenation

The switchable optical properties of Pd-protected RCo₂-type Ho_0.6Mm_0.4Co₂ alloy thin films have been investigated in a KOH electrolyte. The reversible optical switching has been carried out simultaneously by measuring transmitted light through the thin film during electrochemical charging–discharging of hydrogen. The dependence of switching speed and cyclic durability of the film on the charging and discharging current density as well as concentration of KOH electrolyte has been studied. In addition, cyclic voltammetric measurements have been performed to examine the hydride formation and decomposition reactions.     

Structural study of cubic pyrochlores based on quantum mechanical simulation

In the ideal A₂B₂O₆O′ pyrochlore structure, the x-value of O atom position is a variable parameter. In Bi_1.5ZnNb_1.5−xTa_xO₇ (BZNT) cubic pyrochlores, the x-values alter with the different compositions of Nb/Ta. In this work, a series of initial models for BZNT were established by analyzing X-ray diffraction data. Then three structure modifying methods, including Rietveld refinement, Rietveld refinement with energy and geometry optimization based on quantum mechanics, were employed to obtain the precise models using Materials Studio. Moreover, the reflectivities of BZNT were computed by quantum mechanical simulation based on the refined models. Comparing the simulation results from different modifying models with the experimental results, it is found that Rietveld refinement with energy optimization is the most accurate method for BZNT pyrochlores. According to the simulation results, the different reflectivities correspond well with various x-values of O atom positions in BZNT pyrochlores.