Thaumasite––direct, woodfordite and other possible formation routes

Two main formation routes for thaumasite exist below 15 °C. One is the direct route from C–S–H reacting with appropriate carbonate, sulfate, Ca²⁺ ions and excess water. The other route is the woodfordite route from ettringite reacting with C–S–H, carbonate, Ca²⁺ ions and excess water, in which thaumasite arises through the intermediate formation of the solid solution woodfordite. The woodfordite route for thaumasite formation appears to be relatively quicker (although still slow) than the direct route, presumably because with the former the ettringite already has the octahedral [M(OH)₆] units that can facilitate the critical change from [Al(OH)₆]³⁻ to [Si(OH)₆]²⁻ groupings. Both routes are mutually dependent on each other. The presence of magnesium salts can modify the path to thaumasite formation. High pressure might be able to stabilise [Si(OH)₆]²⁻ groupings and allow thaumasite to become formed above 15 °C. This possibility is discussed.     

龙潭水电站励磁装置可控硅易损原因及改进措施

通过龙潭水电站对励磁装置可控硅元件实施过电压保护改进前后实际效果的分析,介绍了一种有效的过压保护方式.     

利用黄河泥沙加固下游大堤

黄河是一条举世闻名的多泥沙河流，善淤、善决、善徒给沿河人民带来对过深重灾难，防洪问题一直是国家的心腹之患。泥沙问题是黄河防洪问题的症结所在。在总结固大堤经验的基础，进行挖河疏浚，淤筑“相对地下河”，已作为黄河治理的一项重大决策付诸实施。     

Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping

We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er³⁺ ion are shown and discussed.     

激光冶炼太阳级硅材料的实验研究

通过实验研究表明，大功率ＣＯ２激光器在廉价硅材料制备中应用的可能性。     

黄河流域委属大河控制站站网布局分析检验与调整

简要论述了黄河流域委属大河控制站的基本情况，通过资料分析，按“直线原则”计算了黄河大河控制站布站数目的上、下限，并调查分析落实了各河段近期和中长期治理开发对水资料的需求，确定各河段测站数目的采用值；对照现有站数，结合测站位置，功能，测验，生活条件等，逐段逐站进行审查，综合评估，决定测站的撤，迁，留，并对密度不足的河段提出了设站意见。     

硅光电负阻器件的构成原理与分类

将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法     

Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

液晶光阀光电导层光吸收系数的研究

用化学气相沉积法制备了液晶光阀中光电导层———非晶硅薄膜,从实验中得出最佳制备工艺的参数取值。给出了用包络线法测量非晶硅薄膜光吸收系数的原理,测量了样品的光吸收系数随波长的变化规律。得到样品在最佳工艺条件下的光吸收系数高于1×103cm-1。     

钻井液振动筛叠层筛网透筛率的研究

从理论上详细论述了钻井液振动筛叠层筛网对固相颗粒分离的影响 ,首次提出用透筛率的概念定量地描述这一影响 ,并进行了实例计算。研究表明 ,当上下层筛网随机叠加时对透筛率的影响有以下几种情况 :(1)当上下层筛网开孔尺寸相除的余数为零 ,任意组合叠层筛网的透筛率分别为某一常数 ;(2 )上层筛网目数一定时 ,下层筛网目数越大 ,则透筛率越小 ;(3)上下层筛网的目数相差越小 ,透筛率越小 ;(4 )任意目数的上下层筛网随机叠加后 ,其透筛率仅在一个小范围内变化 ,因此任一叠层筛网有其固有的透筛率属性。