不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

乙炔在磁稳定床中的选择性加氢研究

 制备了一种磁性Pd/Al₂O₃催化剂，采用磁稳定床考察了活性组分负载量、反应条件及CO浓度对乙炔加氢反应性能的影响。结果表明，当反应温度80℃、反应压力1.5MPa、空速9000h－1、磁场强度（H）25kA/m时，乙炔转化率为100％，乙烯选择性可达81％，具有优良的乙炔加氢活性和乙烯选择性，优于相同反应条件下的进口催化剂；250h稳定性实验结果表明，磁性Pd/Al2O3催化剂具有良好的初活性和乙烯选择性，催化剂性能稳定。     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

棒状液晶分子相变问题的机械旋转模型研究

综述一种关于棒状液晶材料的分子结构与液晶相的相关关系的研究成果。介绍了有关液晶分子的机械旋转模型。该模型将液晶分子视作一种高速旋转的转子,通过分子参数计算,对液晶材料的相变温度和分子结构之间的关系给出了一种全新的解释。最新研究表明,含氟三苯液晶材料的分子结构中存在slim和fat现象,能够对液晶材料的相变进行合理解释。该模型能够通过简单的模型方法对新型液晶材料的分子设计与合成提供有用的信息。     

乙炔黑吸附聚合制导电聚苯胺

用乙炔黑吸附化学聚合新工艺制备导电聚苯胺，可保持电导率不变，但转化率和堆密度提高，并明显改善了聚苯胺的颗粒形态和制膜加工性，使由其制备的聚苯胺复合正极膜和固体聚苯胺锂蓄电池的电化学性能得以改进。     

柴油机针阀体的乙炔低压渗碳

乙炔低压渗碳可以有效地避免在真空渗碳过程中产生炭黑和焦油，同时由于乙炔具有较高的供碳能力，使这一技术尤其适用于针阀体这样的小直径深盲孔零件。     

Low surface energy films based on partially fluorinated isocyanates: the effects of curing temperature

Self-stratification strategy can be used to prepare films in which both bulk and surface properties can be optimized. By using this approach, only a very small quantity of fluorinated species is needed to generate a surface with low surface energy. When cross-linking is involved during film formation, we are dealing with a competition behavior between the diffusion of fluorinated species and the formation of cross-linked network. In this study low surface energy polymeric films were prepared on the basis of partially fluorinated polyisocyanates, in combination with hydroxyl-end-capped three-armed solventless liquid oligoesters and modified hyperbranched polyesters. At a fluorine concentration of only 0.5 wt.%, contact angles of water and hexadecane can reach 120° and 80°, respectively. A surface energy as low as 10–15 mN/m can be obtained upon the addition of less than 1 wt.% of fluorine in the films. It was shown, from real time ATR-FTIR and contact angle measurements, that the curing temperatures demonstrated significant effects on the cross-linking rate as well as on the wettability of the films.     

Conducting composites of polythiophene and polyfuran with acetylene black

Conducting composites of polythiophene (PTP) and polyfuran (PF) with acetylene black (AB) were prepared via chemical oxidative polymerization of thiophene and furan in a suspension of AB in CHCl₃ at room temperature using anhydrous FeCl₃ as the oxidant. Formation of PTP and PF and their subsequent incorporation in PTP–AB and PF–AB composite systems were confirmed by FTIR analysis. Scanning electron microscope analysis showed the presence of compact clusters of particles in both composites. Transmission electron micrographs of PTP–AB and PF–AB composites showed formation of globular polymer encapsulated AB particles with average diameters of the order of ～100 nm in both systems. Thermogravimetric analysis revealed that the overall thermal stability varied in the order: AB > PTP–AB > PTP and AB > PF–AB > PF. DC conductivity values for the PTP–AB and PF–AB composites were of the order of 10^?2 and 10^?3 S cm^?1, respectively. Copyright © 2004 Society of Chemical Industry     

低k氟化非晶碳层间介质对芯片性能的影响

讨论了通过合理设计的工艺流程将低k氟化非晶碳材料应用到制造工艺中作为互连介质对集成电路性能的影响。基于一个互连结构简化模型计算出采用低k氟化非晶碳材料作为互连介质后RC延迟、功率耗散和线间串扰的变化情况。采用低k氟化非晶碳介质后,RC延迟和功率耗散随着互连长度的增大而减小,线间串扰也得到显著抑制。     

New catalyst systems for the polymerization of acetylene

The catalytic activities of WCI₆Ph₄Sn, MoCl₅Ph₄Sn and tetrabenzyltitanium were examined in the polymerization of acetylene. The structure, morphology and electrical conductivity of the doped and non doped polyacetylene were also studied.