Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

Stabilization of inter-area and/or oscillatory modes in large-scale power system by voltage impedance power system (VIPS) apparatus based on decentralized control scheme

New technologies such as power electronics have made it possible to change continuously the impedance of a power system not only to control power flow but also to enhance stability. A power system incorporating a variable impedance apparatus such as a variable series capacitor (VSrC) and high-speed phase shifter (HSPS) is called VIPS (Variable Impedance Power System) by the authors. This paper proposes a novel control method of VIPS apparatus such as VSrC and HSPS installed at an interconnecting point for stabilizing inter-area unstable and/or oscillatory modes. The proposed design method of the control system is a kind of hierarchical decentralized control method of a large-scale power system based on a Lyapunov function. Under the proposed control scheme, each subsystem can be stabilized independently by local controllers such as AVR, speed governor and PSS, and then the whole interconnected system can be stabilized by VIPS apparatus taking into account interactions between subsystems. The effectiveness and robustness of the VIPS apparatus control are shown by numerical examples with model systems including a large-scale power system.     

用于高压电容器的SrTiO3基陶瓷

报道ＳｒＴｉＯ３基陶瓷的制备方法和介电性质，给出了用此种陶瓷制成的高压电容器的试验结果，并对它位进行了讨论。     

一种基于混沌的随机数发生器设计及其IC实现

在密码学、仿真学以及集成电路测试等许多领域 ,随机数起着重要的作用。在密码学中 ,通常要求所使用的随机数具有不可预测性。基于混沌现象 ,使用开关电容技术 ,用集成电路实现了一种硬件随机数发生器。测试结果表明 ,其产生的序列具有不可预测性 ,可以满足密码学的应用要求。     

开关电流技术：一种新的模拟抽样数据处理方法

开关电流（ＳＩ）技术是一种新的模拟抽样数据处理技术，介绍了开关电流电路的基本单元结构，讨论了目前开关电流技术中存在的问题及其解决方法。对开关电流技术与开关电容技术的一些基本特征进行了比较，ＳＩ技术不仅结构简单，而且与标准ＣＭＯＳ工艺兼容，可望替代开关电容电路。     

片式阻容元件的现状和发展方向

在国外的片式元器件（ＳＭＤ）中，片式阻容元件发展最快，主要表现为片式化率迅速上升，尺寸越来越小，性能越来越好，包装形式多样化和生产管理不断改进。本文综述了国外阻容元件在这些方面的进展，指出了我国的差距，提出了我国如何发展的措施。     

本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。     

脉冲激光沉积SrBi2Ta2O9铁电薄膜电容特性研究

用ＰＬＤ方法成功地制备了ＳＢＴ铁电薄膜，并制作成Ｐｔ／ＳＢＴ／Ｐｔ薄膜电容器。ＳＢＴ薄膜的晶面取向以（００８）和（１１５）为主。在５Ｖ电压下，极化反转，并且得到较饱和的电滞回线，剩余极化强度和矫顽电场分别为８４μＣ／ｃｍ２和５７ｋｖ／ｃｍ。ＩＶ特性测试显示两个对称的双稳峰，并得到零电压下，面积为３１４×１０４μｍ２，厚度为０３５μｍ的电容器，电容约为５６０ｐＦ，介电常数约为６００。疲劳测试表明Ｐｔ／ＳＢＴ／Ｐｔ具有优良的抗疲劳特性。     

DC-DC电荷泵的研究与设计

以Dickson电荷泵的基本原理为出发点，研究了一种将正电压输入转为负电压输出的开关电容电路。由于开关电容的充放电特点，为确定电容时间常数，采用非交叠时钟控制信号避免了由于时钟交叠而造成的当电容充电还未完成即对下一级电容进行放电的现象。同时，参考功率MOS-FET的电容模型通过增大驱动电路的电流减小了开关管的上升延时，提高了开关动作的速度，使转换效率得到明显提高。此电路结构简单，性能优良，易于集成，可广泛应用于输出负电压的电源产品中。     

有源滤波器的设计

首先阐明有源滤波器的基本概念和传递函数,然后着重介绍具有低灵敏度的GIC型双运放电路和在较高频率时应用的开关电容滤波器,最后举例说明它们的应用.