A Memristive Element Based on an Electrically Controlled Single-Molecule Reaction

The exponential proliferation of data during the information age has required the continuous exploration of novel storage paradigms, materials, and devices with increasing data density. As a step toward the ultimate limits in data density, the development of an electrically controllable single-molecule memristive element is reported. In this device, digital information is encoded through switching between two isomer states by applying a voltage signal to the molecular junction, and the information is read out by monitoring the electrical conductance of each isomer. The two states are cycled using an electrically controllable local-heating mechanism for the forward reaction and catalyzed by a single charge-transfer process for the reverse switching. This single-molecule device can be modulated in situ, is fully reversible, and does not display stochastic switching. The I–V curves of this single-molecule system also exhibit memristive character. These features suggest a new approach for the development of molecular switching systems and storage-class memories.     

Fabrication and investigation of ferroelectric memristors with various synaptic plasticities

In the post-Moore era, neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks. Memristors have been proposed as a key part of neuromorphic computing architectures, and can be used to emulate the synaptic plasticities of the human brain. Ferroelectric memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage, low write/read latency and tunable conductive states. However, among the reported ferroelectric memristors, the mechanisms of resistive switching are still under debate. In addition, there needs to be more research on emulation of the brain synapses using ferroelectric memristors. Herein, Cu/PbZr_0.52Ti_0.48O₃ (PZT)/Pt ferroelectric memristors have been fabricated. The devices are able to realize the transformation from threshold switching behavior to resistive switching behavior. The synaptic plasticities, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression and spike time-dependent plasticity, have been mimicked by the PZT devices. Furthermore, the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament models. This work may contribute to the application of ferroelectric memristors in neuromorphic computing systems.     

忆阻器及其阻变机理研究进展

忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景.本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了展望.     

Recent advances in covalent organic polymers-based thin films as memory devices

Covalent organic polymers (COPs) have emerged as a promising class of materials for memory devices due to their unique electronic properties and potential for tunability. This review highlights recent advances in the field of COPs-based thin films for memory applications, with a focus on the synthesis and characterization of COP thin films, their electronic properties, and their performance as memory devices. The potential of COPs-based thin films as flexible memory devices is also discussed. Overall, the recent progress in COPs-based thin films for memory applications suggests that these materials may have a significant impact on the development of next-generation memory technologies.