贝克曼AllegraTM21R型超高速离心机故障排除一例

贝克曼Allegra^TM 21R型超高速离心机开机后，操作面板上出现错误代码“28”，离心机不旋转。离心机的电机采用无刷感应驱动，由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2，并更换已烧毁的栅极电阻后。开机试验，仪器恢复正常。     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Phenomenology of nonlocal cellular automata

Dynamical systems with nonlocal connections have potential applications to economic and biological systems. This paper studies the dynamics of nonlocal cellular automata. In particular, all two-state, three-input nonlocal cellular automata are classified according to the dynamical behavior starting from random initial configurations and random wirings, although it is observed that sometimes a rule can have different dynamical behaviors with different wirings. The nonlocal cellular automata rule space is studied using a mean-field parametrization which is ideal for the situation of random wiring. Nonlocal cellular automata can be considered as computers carrying out computation at the level of each component. Their computational abilities are studied from the point of view of whether they contain many basic logical gates. In particular, I ask the question of whether a three-input cellular automaton rule contains the three fundamental logical gates: two-input rules AND and OR, and one-input rule NOT. A particularly interesting edge-of-chaos nonlocal cellular automaton, the rule 184, is studied in detail. It is a system of coupled selectors or multiplexers. It is also part of the Fredkin's gate—a proposed fundamental gate for conservative computations. This rule exhibits irregular fluctuations of density, large coherent structures, and long transient times.     

Controlled decoherence of three-level rf-SQUID qubit with asymmetric potential

A scheme is proposed to controll the decoherence of three-level rf-SQUID qubit with asymmetric potential by designing an external electric circuit for superconductive flux qubit. The results show that it may not only raise the gate speed but also extend decoherence time for a three-level structure.     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Ag+与Hg2+对G-四链体DNA结构的破坏及其对构筑DNA逻辑门的应用

本工作利用圆二色光谱研究了Ag+与Hg2+对4种代表性G-四链体DNA结构的破坏作用。结果表明Ag+可能通过与碱基G螯合从而破坏G-四链体结构;Hg2+能通过形成T-Hg2+-T碱基对,及其他方式破坏G-四链体结构。含巯基(-SH)的半胱氨酸与Ag+与Hg2+可以发生较强的配位作用,从而使被Ag+与Hg2+破坏后的G-四链体DNA结构得以回复。基于此,一个新颖的Ag+/Hg2+-半胱氨酸-DNA逻辑门得以构筑。     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

A Light‐up Logic Platform for Selective Recognition of Parallel G‐Quadruplex Structures via Disaggregation‐Induced Emission

The design of turn‐on dyes with optical signals sensitive to the formation of supramolecular structures provides fascinating and underexplored opportunities for G‐quadruplex (G4) DNA detection and characterization. Here, we show a new switching mechanism that relies on the recognition‐driven disaggregation (on‐signal) of an ultrabright coumarin‐quinazoline conjugate. The synthesized probe selectively lights‐up parallel G4 DNA structures via the disassembly of its supramolecular state, demonstrating outputs that are easily integrable into a label‐free molecular logic system. Finally, our molecule preferentially stains the G4‐rich nucleoli of cancer cells.