Room‐temperature terahertz emission from ZnSe‐based quantum cascade structures: A simulation study

We identified conditions for room‐temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn_1–xMg_x Se material systems. The THz QCL devices are based on three‐level two‐well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room‐temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher‐energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Study of the third order nonlinear optical properties of Zn<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se and Cd<Subscript>1−x</Subscript>Mg<Subscript>x</Subscript>Se crystals

Third order nonlinear optical susceptibilities χ^<3> of ternary Zn_1−xMg_xSe and Cd_1−xMg_xSe crystals have been measured using standard degenerate four-wave mixing (DFWM) method at 532 nm. The nonlinear transmission technique has been applied to check if our crystals exhibit two-photon absorption. The studied Zn_1−xMg_xSe and Cd_1−xMg_xSe solid solutions were grown from the melt by the modified high-pressure Bridgman method. For both crystals the energy gap increases with increasing Mg content. In the case of Zn_1−xMg_xSe, it was found that the value of third order nonlinear optical susceptibility χ^<3> decreases with increasing Mg content. An explanation of this behaviour results from the dependence of optical nonlinearities on the energy band gap E_g of the studied crystals. In the case of Cd_1txMg_xSe with low content of Mg, no response was observed for the studied wavelength since the energy gap in such crystals is smaller than the photon energy of the used laser radiation. It was also found that the value of third order nonlinear optical susceptibility χ^<3> for Cd_0.70Mg_0.30Se is higher than for Zn_0.67Mg_0.33Se. This behaviour can be understood if one take into consideration that the free carrier concentration in Cd_1−xMg_xSe samples is about four orders of magnitude higher than that in Zn_1txMg_xSe ones with comparable Mg content respectively. It is commonly known that when the electric conductivity increases, the values of nonlinear optical properties increase. From the performed measurements one can conclude that the incorporation of Mg as constituent into ZnSe and CdSe crystals leads to a change of the third order nonlinear optical susceptibilities.     

单质直接气相生长ZnMgSe单晶

采用高纯Zn、Mg、Se2单质为原料,以NH4Cl作为反应输运剂,用化学气相输运(CVT)的方法一步成功生长出ZnMgSe单晶。通过XRD、RO-XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了ZnMgSe晶体的结构、成份以及光学特性。结果表明:ZnMgSe单晶具有良好的结晶性能,在400～800 nm范围内透过率达到40%～50%,在2.2～2.6 eV范围内存在与深能级电子复合相关的发光带。研究证明由Zn、Mg、Se2单质在输运剂NH4Cl辅助下一步直接合成ZnMgSe单晶是可行的。