Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO₂) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO₂ layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.     

Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices.     

Photoinduced dissociation reactions of silver fluoride cluster ions

Photoinduced dissociation in the ultraviolet region has been investigated for Ag _nF _n-1 ⁺ cluster ions. Photodissociation spectrum of Ag₂F⁺ in the energy of 3.8–5.6 eV exhibits several sharp bands corresponding to the transition to electronically excited states. In this dissociation, only the Ag₂ ⁺ ion was observed as a fragment ion. Theoretical calculation indicates that the parent Ag₂F⁺ ion has a linear Ag-F-Ag equilibrium geometries in the ground and excited states. Since conformational changes by excitation of bending vibration are necessary for the fragmentation of an F atom, this indicates that production of Ag₂ ⁺ from Ag₂F⁺ is a result of internal conversion and following conformational changes.     

Formation of small water cluster anions by attachment of very slow electrons at high resolution

Using a high resolution laser photoelectron attachment method, we have studied the formation of (H ₂ O) _q ^- (q = 2, 6, 7, 11, 15) cluster ions in collisions of slow free electrons (E = 1-80 meV) and Rydberg electrons (n = 12-300) with water clusters. Resonances at zero energy have been observed, the shapes of which are strongly dependent on cluster size. The results are discussed in terms of the formation of metastable negative ions. Received 8 March 1999     

Composition spread metal thin film fabrication technique based on ion beam sputter deposition

A composition spread metal thin film fabrication technique based on ion beam sputter deposition method was developed. The technique enables us to fabricate any desired part or a complete binary/ternary composition spread metal thin films onto a single substrate by sequentially sputtering different target materials. Composition spread metal thin films can be deposited directly on a dielectric film in patterned electrode shape for C-V and I-V measurements. The system could be especially useful in the search for new multi-component metal gate materials.     

Multi electron capture processes in slow collisions between X<Superscript>7+</Superscript> (X = N,O and Ne) ions with C<Subscript>60</Subscript>

Electron capture processes in collision between slow X⁷⁺ (X = N, O and Ne) ions and C₆₀ fullerene have been investigated using coincident measurements of the number n of ejected electrons, the mass and charge of the multicharged C₆₀ ^r+ recoil ions and their fragments C_m ⁱ⁺ and the final charge state of the outgoing projectiles X^(q-s)+ ( ). The collision velocity is about 0.4 a.u. The partial cross-sections σ_r ^s , corresponding to r electrons transferred to the projectile with only s electrons stabilized, have been measured. Cross-sections for collisions “inside” and those “outside” the C₆₀ cage have been separated by analyzing the kinetic energy of the outgoing projectile. The mean final charge state for frontal collisions has been measured to 3.1, 2.6 and 2.5 for N⁷⁺, O⁷⁺ and Ne⁷⁺ respectively. These results show the importance of the core effect on the stabilisation processes of captured electrons.     

Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs

With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.     

Current-voltage characteristics of Au/GaN/GaAs structure

Au/GaN/n-GaAs structure has been fabricated by the electrochemically anodic nitridation method for providing an evidence of achievement of stable electronic passivation of n-doped GaAs surface. The change of the electronic properties of the GaAs surface induced by the nitridation process has been studied by means of current-voltage (I-V) characterizations on Schottky barrier diodes (SBDs) shaped on gallium nitride/gallium arsenide structure. Au/GaN/n-GaAs Schottky diode that showed rectifying behavior with an ideality factor value of 2.06 and barrier height value of 0.73 eV obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of GaN at the Au/GaAs interfacial layer. The formation of the GaN interfacial layer for the stable passivation of gallium arsenide surface is investigated through calculation of the interface state density N_ss with and without taking into account the series resistance R_s. While the interface state density calculated without taking into account R_s has increased exponentially with bias from 2.2×10¹² cm⁻² eV⁻¹ in (E_c−0.48) eV to 3.85×10¹² cm⁻² eV⁻¹ in (E_c−0.32) eV of n-GaAs, the N_ss obtained taking into account the series resistance has remained constant with a value of 2.2×10¹² cm⁻² eV⁻¹ in the same interval. This has been attributed to the passivation of the n-doped GaAs surface with the formation of the GaN interfacial layer.     

Photoinjection studies of ion-implantation-induced electron traps in MOS structures

Trapping centers related to P⁺ and B⁺ ions implanted in the SiO₂ layer as well as traps introduced into SiO₂ during boron implantation through the oxide into the silicon substrate have been investigated. The internal photoemission method has been used to estimate their capture cross section and total densityN _t .     

Characterization of gadolinium oxide film by pulse laser deposition

In this work, Gd-oxide dielectric films were deposited on Si by pulse laser deposition method (PLD), moreover, the micro-structures and electrical properties were reported. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that Gd-oxide was polycrystalline Gd₂O₃ structure, and no Gd metal phase was detected. In addition, both interface at Si and Ni fully silicide (FUSI) gate were smooth without the formation of Si-oxide. X-ray photoelectron spectroscopy (XPS) confirmed the formation of Gd₂O₃ and gave an atom ratio of 1:1 for Gd:O, indicating O vacancies existed in Gd₂O₃ polycrystal matrix even at O₂ partial pressure of 20 mTorr. Electrical measurements indicated that the dielectric constant of Gd-oxide film was 6 and the leakage current was 0.1 A/cm² at gate bias of 1 V.