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1.
Sadaharu Jo 《Applied Surface Science》2006,252(10):3514-3519
The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills. 相似文献
2.
(001)-oriented strontium bismuth tantalate thin films have been grown on Pt/TiO2/SiO2/Si (100) substrates by pulsed laser deposition. The room-temperature current–electric field dependence of the films has been
investigated, which revealed a space-charge-limited conduction mechanism. The microstructures of grain boundaries and structural
defects in these films were also examined by transmission electron microscopy and high-resolution transmission electron microscopy,
respectively. The grains of the films deposited at 550 °C exhibited polyhedral morphologies, and the average grain size was
about 50 nm in length and 35 nm in width. At a small misorientation angle (8.2°) tilt boundary, a regular array of edge dislocations
with about 3-nm periodic distance was observed, and localized strain contrast near the dislocation cores was also observed.
The Burgers vector b of the edge dislocation was determined to be [110]. At a high misorientation angle (39.0°) tilt grain boundary lattice strain contrast associated with the distortion of
lattice planes was observed, and the mismatching lattice images occurred at about 2 nm along the boundary. The relationship
between microstructural defects at grain boundaries and leakage currents of these films is also discussed.
Received: 8 September 2000 / Accepted: 18 December 2000 / Published online: 28 February 2001 相似文献
3.
E. Floriani R. Lima R. Vilela Mendes 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2008,46(2):295-302
In this paper, we examine the effects of the
gravitational field on the dynamical evolution of the cavity-field
entropy and the creation of the Schr?dinger-cat state in the
Jaynes-Cummings model. We consider a moving two-level atom
interacting with a single mode quantized cavity-field in the
presence of a classical homogeneous gravitational field. Based on
an
su(2) algebra, as the dynamical symmetry group of the model, we derive the reduced density operator of the cavity-field
which includes the effects of the atomic motion and the gravitational field. Also, we obtain the exact solution and the approximate
solution for the system-state vector, and examine the atomic dynamics. By considering the temporal evolution of the
cavity-field entropy as well as the dynamics of the Q-function of the cavity-field we study the effects of the gravitational
field on the generation of the Schr?dinger-cat states of the cavity-field by using the Q-function,
field entropy and approximate solution for the system-state vector. The results show that the
gravitational field destroys the generation of the Schr?dinger-cat state of the cavity-field. 相似文献
4.
A. Claverie B. Colombeau B. de Mauduit C. Bonafos X. Hebras G. Ben Assayag F. Cristiano 《Applied Physics A: Materials Science & Processing》2003,76(7):1025-1033
Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion.
The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by
which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed
of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe
such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer
may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more
stable forms.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr 相似文献
5.
Yukio Hayashi 《Physica A》2009,388(6):991-998
Robust and efficient design of networks on a realistic geographical space is one of the important issues for the realization of dependable communication systems. In this paper, based on a percolation theory and a geometric graph property, we investigate such a design from the following viewpoints: (1) network evolution according to a spatially heterogeneous population, (2) trimodal low degrees for the tolerant connectivity against both failures and attacks, and (3) decentralized routing within short paths. Furthermore, we point out the weakened tolerance by geographical constraints on local cycles, and propose a practical strategy by adding a small fraction of shortcut links between randomly chosen nodes in order to improve the robustness to a similar level to that of the optimal bimodal networks with a larger degree for the network size N. These properties will be useful for constructing future ad hoc networks in wide-area communications. 相似文献
6.
One iterative in Grover's original quantum search algorithm consists of two Hadamard-Walsh transformations, a selective amplitude inversion and a diffusion amplitude inversion. We concentrate on the relation among the probability of success of the algorithm, the phase shifts, the number of target items and the number of iterations via replacing the two amplitude inversions by phase shifts of an arbitrary φ = ψ(0 ≤, ψ≤ 27r). Then, according to the relation we find out the optimal phase shifts when the number of iterations is given. We present a new quantum search algorithm based on the optimal phase shifts of 1.018 after 0.57π√M/N iterations. The new algorithm can obtain either a single target item or multiple target items in the search space with the probability of success at least 93.43% 相似文献
7.
N. Lyotard W. L. Shew L. Bocquet J.-F. Pinton 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,60(4):469-476
We make time resolved velocity measurements of steel
spheres in free fall through liquid using a continuous ultrasound
technique. We explore two different ways to induce large changes in
drag on the spheres: 1) a small quantity of viscoelastic polymer
added to water and 2) altering the surface of the sphere. Low
concentration polymer solutions and/or a pattern of grooves in the
sphere surface induce an early drag crisis, which may reduce drag by
more than 50% compared to smooth spheres in pure water. On
the other hand, random surface roughness and/or high concentration
polymer solutions reduce drag progressively and suppress the drag
crisis. We also present a qualititative argument which ties the
drag reduction observed in low concentration polymer solutions to
the Weissenberg number and normal stress difference. 相似文献
8.
R. Dwilinski R. DoradzinskiJ. Garczynski L.P. SierzputowskiM. Zajac M. Rudzinski 《Journal of Crystal Growth》2009,311(10):3058-3062
In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very intensive, perfectly resolved excitonic structure in range of band-edge emission of gallium nitride. This structure consists of both lines related to free excitons emission and very narrow lines (full-width at half-maximum (FWHM) value of the order of 0.3 meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers. 相似文献
9.
Analysis of Frequency Spectrum of Laser-Induced Vibration of Microbeam Resonators 总被引:2,自引:0,他引:2 下载免费PDF全文
The vibration phenomenon during pulsed laser heating of micro-beams is investigated. The beam is made of silicon and is heated by a laser pulse with a non-Gaussian temporal profile and with an ultrashort pulse duration of 2ps, which incites vibration due to the thermoelastic damping effect. This coupled thermoelastic problem is solved using an analytical-numerical technique based on the Laplace transformation. The damping ratio and resonant frequency shift ratio of beams due to the air damping effect and the thermoelastic damping effect are also examined and discussed. 相似文献
10.
The growth of perylene films on an amorphous oxide bottom layer is investigated. The perylene films show clear spiral growth and formation of screw dislocations. As a function of deposition rate and film thickness the densities of screw dislocations, grains as well as the roughness and the lateral correlation length are determined from AFM images. The evolution of microstrain as calculated from an XRD peak profile analysis corresponds to the dislocation density. The simultaneous decrease of grain density and dislocation density with film thickness is explained by considering the overgrowth of grains due to loss of dislocations acting as growth spirals. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)