亚运会兴奋剂检测

本文建立了检查IOC禁用的五大类100种药物的筛选和确证方法。对药物检查机构及资格认可,药物检验的一般步骤,第十一届亚运会兴奋剂的检测均作了简要的介绍。     

兴奋剂检测中的化学衍生化方法

本文评述了兴奋剂检测中的各种化学衍生化方法,对蛋白同化激素、麻醉镇痛剂、β-阻断剂和利尿剂分别进行了讨论。这四类药物结构各不相同,但绝大多数属于高沸点、难挥发的极性化合物,不适于直接进行GC或GC/MS分析。通过化学衍生化.不仅可增大试样的挥发性和稳定性,减小样品的极性,使原来难以进行GC分析的试样转变成适合于色谱分析的试样,而且通过衍生化还可达到改善分离效果、提高检测灵敏度的目的。     

铕掺杂BaPbO3的EXAFS研究

采用扩展Ｘ射线吸收精细结构方法，研究了铕掺杂ＢａＰｂＯ３多晶粉末中Ｅｕ，Ｐｂ两种原子的近邻结构。Ｅｕ的掺杂，导致八面体中金属Ｐｇ，Ｅｕ的配位数降低。     

显微共焦拉曼光谱研究电化学合成聚苯胺膜

显微共焦拉曼技术被用来研究电化学合成的聚苯胺（PANI）膜. 研究结果表明：在不同的激发光聚焦深度，聚苯胺膜的拉曼光谱有明显变化.从而反映出聚苯胺膜的掺杂程度在膜生长过程中随膜厚度的增长而增加. 并由X射线电子能谱（XPS）和紫外吸收光谱（UV）分析证实.     

N-TiO2/ZnO复合纳米管阵列的掺杂机理及其光催化活性

以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高.     

DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS

The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have beenelectrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in borontrifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated byexcitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film wasincreasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bandsassigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm~(-1),respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrationsincrease with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach toimproving the doping level of as-grown thin compact PMeT film.     

N-TiO2/ZnO复合纳米管阵列的掺杂机理及其光催化活性

以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高.     

碳掺杂α-S_8的光学性质和弹性性质的第一性原理计算

采用第一性原理研究了C原子在光催化剂α-S8中掺杂后体系电子结构、能带结构、光学性质、弹性性质以及其各向异性的变化规律.结果表明C原子在α-S8中掺杂后新形成的C―S键键长变短、键的重叠布居数增加、电荷密度增加,表明新键的共价性变强.掺杂结构的带隙为2.64 eV,比纯α-S8的带隙小0.15 eV,表明掺杂后的结构导电性增强.掺杂结构的光吸收波长延长至650 nm左右,极大地提高了α-S8的光吸收效率.弹性性质计算表明C掺杂后α-S8的机械性能下降,但仍为脆性材料.各向异性的研究表明掺杂后的材料各向异性增强.     

Electrochemical Investigations of Mn and Al Co‐doped Li2FeSiO4/C Cathodes for Li‐Ion Battery

Few studies on orthosilicate cathodes co‐doped with two cations have been reported until now. Here, we report the synthesis of Mn and Al co‐doped Li₂Fe_0.8?xMn_0.2Al_xSiO₄ (x = 0.05 and 0.1) by a solid‐state reaction route and characterized by X‐ray diffraction (XRD), particle size analysis, scanning electron microscopy (SEM), galvanostatic charge/discharge tests, and capacity intermittent titration technique (CITT), as compared to the single‐doped Li₂Fe_0.8Mn_0.2SiO₄. Though the co‐doping leads to a slight decreased capacity owing to the increased impurity and Al³⁺ inertia, a better cycling performance is obtained as expected. Especially when x is 0.05, the modified sample (Li₂Fe_0.75Mn_0.2Al_0.05SiO₄) shows an initial discharge capacity of 159.3 mAh/g and high capacity retention of 78% after 50 charge/discharge cycles. The present work indicates that a synergistic effect of Mn and Al co‐substitution at the Fe site could partly make up the disadvantage of single Mn doping, and might provide an effective guide for the dopant incorporation to Li₂FeSiO₄ systems.     

Resistivity distribution of silicon single crystals using codoping

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B–P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.