金钢石的制备研究

本文研究了两种不同质异构体石墨—金刚石的转化条件，以及在实验室现有条件下，利用石墨材料制备金刚石颗粒的具体方法和试验结果。     

Wavelength dependence in photochemical vapor deposition of aluminum film using dimethylaluminum hydride

In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH₃)₂AlH, a surface reaction dominated below a (CH₃)₂AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.     

关于CVD 矩阵的n- 宽度

本文证明了d_2k =δ_2k =d^2k ≥b_2k，其中d_2k ,δ_2k , b_2k分别表示Ａ（Ｂｌ^M_p）在ｌ^N_q下的Ｋｏｌｍｏｇｏｒｏｖ，线性，Ｂｅｒｎｓｔｅｉｎ ２ｋ－宽度，ｄ^2k 表示Ａ^Ｔ（Ｂｌ^N相似文献   

Photo-Absorption and photochemical decomposition of copper and alkaline-earth ß-diketonates as source gases of high-Tc superconducting films

For low-temperature deposition of oxide films relating to Bi-Sr-Ca-Cu-O superconductors, photo-absorption and -decomposition properties were examined with respect to copper and alkaline-earth ß-diketonates. It was confirmed that all ß-diketonates examined were promising as source materials for photochemical vapour deposition (photo-CVD) using a low-pressure mercury lamp, in view of their large light absorption coefficients at wavelength 254 nm. The light irradiation was effective for the formation of highly crystalline oxide films at temperatures below 600 °C. By combining two sources, Ca₂CuO₃ and SrCuO₂ films were prepared. Photo-CVD of c-axis oriented Bi₂Sr₂CuO_x film was achieved by the irradiation of ternary sources of Bi(C₆H₅)₃ and strontium and copper ß-diketonates at 500 °C.     

Activity of TiO2 deposited by the CVD method on ammoxidized surface of a carbonaceous material in hydrogenation of styrene

Hydrogenation of styrene has been applied as a test reaction to study the catalytic activity of TiO₂ deposited by the CVD (chemical vapour deposition) method on the surface of a carbonaceous material enriched in nitrogen (C_N).     

Large-area boron carbide protective coatings for controlled thermonuclear research prepared byin situ plasma CVD

Impurity release from the first wall and components facing the hot plasma in Tokamak devices for controlled fusion research and the concomitant pollution of the plasma lead to enhanced energy losses and deuterium-tritium luel dilution. Both these effects can prevent reaching the ignition conditions. The recently developed technique for large areain situ deposition of boron carbide protective coatings by means of plasma-induced chemical vapor deposition enables one to significantly improve the purity of the fusion plasma. The prospects of approaching the scientific break-even in the large machines of the Tokarnak type has been increased.Extended version of an invited paper presented at the 10th International Symposium on Boron, Borides, and Related Compounds, Albuquerque, New Mexico, August 1990.The term Tokarnak is an abbreviation of the Russian name toroidal magnetic chamber.     

A Three-Dimensional Two-Phase Model for Thermal Plasma Chemical Vapor Deposition with Liquid Feedstock Injection

In this paper, a comprehensive model for thermal plasma chemical vapor deposition (TPCVD) with liquid feedstock injection is documented. The gas flow is assumed to be steady, of a single temperature. Radiation and charged species contributions are excluded, but extensive homogeneous and heterogeneous chemistry is included. The liquid phase is traced by considering individual droplets. Discussion on the model's application to diamond production from acetone in a hydrogen–argon plasma is included. The major conclusions are: (1) Liquid injection possesses a capability to deliver the hydrocarbon precursor directly onto the deposition target. (2) For the case of complete evaporation of the droplet before reaching the substrate, the deposition rate is similar to that obtained with gaseous precursors. (3) The computational results compare well with experimental data. The modeling results can be used to optimize the injection parameters with regard to the deposition rate.     

Crystal structure of oxotitanium(IV) 2,2,6,6-tetramethyl-3,5-heptanedionate

The structure of titanyl dipivalylmethanate TiO(dpm)₂ has been studied by X-ray diffraction analysis. The compound has a molecular structure formed by isolated centrosymmetrical dimers [TiO(dpm)₂]₂; the unit cell contains two structurally related, crystallographically unique binuclear molecules. The Ti...Ti distance in the dimer is 2.73 Å. Crystal data for Ti₂C₃₆H₇₆O₁₀: a = 32.477(6) Å, b = 14.409(3) Å, c = 25.630(5) Å; β = 107.82(3)°, space group C2/c, Z = 8, d _calc = 1.002 g/cm³.     

Selective Electroanalytical Assay for Cysteine at a Boron Doped Diamond Electrode

The electrochemical oxidation of the cysteine‐quinone adduct has been examined as a means of providing an electroanalytical cysteine specific detection protocol. The appliance of square‐wave voltammetry allowed 0.5 μM as a limit of detection. The effects of various biologically relevant interferences including other thiols were studied and found to present no change in the voltammetric profile. The practical applicability and efficiency of the methodology was probed through the determination of cysteine concentration in growth tissue medium.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday