A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator （SOI） substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the Г-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3μm, hence the incident light at wavelength 1.3μm will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540 nm. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.     

《中国光学》投稿须知

正1征稿范围本刊征集反映国内外光学、光电子学、光学技术应用的最新科学理论、研究成果、前沿技术和发展动态的原创性论文、技术报告、阶段性研究报告和综合评述等。2稿件要求来稿应信息准确、论点鲜明、实验数据可靠、条理清晰、文字精炼,一般在6000字左右为宜,综述性论文可适当放宽。具体要求如下:     

《中国光学》投稿须知

1征稿范围 本刊征集反映国内外光学、光电子学、光学技术应用的最新科学理论、研究成果、前沿技术和发展动态的原创性论文、技术报告、阶段性研究报告和综合评述等。     

2012年湖北省光学学术年会征文通知

为促进我省光学光电子学领域的学术交流,加强我省光学光电子行业的技术创新和产业进步,推动武汉东湖国家自主创新示范区的建设,＂2012年湖北省光学学术年会＂和＂湖北省光学学会第七次会员代表大会＂定于2012年7月上、中旬在湖北省通山县召开。     

《中国光学》投稿须知

1征稿范围本刊征集反映国内外光学、光电子学、光学技术应用的最新科学理论、研究成果、前沿技术和发展动态的原创性论文、技术报告、阶段性研究报告和综合评述等。2稿件要求来稿应信息准确、论点鲜明、实验数据可靠、条理清晰、文字精炼,一般在6000字左右为宜,综述性论文可适当放宽。具体要求如下:     

声子色散和磁场对极性晶体中极化子自陷能的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散和磁场对极性晶体中极化子振动频率和自陷能的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数之间的变化关系.数值计算结果表明极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的增大而增大.     

《中国光学》投稿须知

1征稿范围本刊征集反映国内外光学、光电子学、光学技术应用的最新科学理论、研究成果、前沿技术和发展动态的原创性论文、技术报告、阶段性研究报告和综合评述等。     

《中国光学》投稿须知

1征稿范围 本刊征集反映国内外光学、光电子学、光学技术应用的最新科学理论、研究成果、前沿技术和发展动态的原创性论文、技术报告、阶段性研究报告和综合评述等。     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.