Theory of chemical bonds in metalloenzymes XXII: a concerted bond-switching mechanism for the oxygen–oxygen bond formation coupled with one electron transfer for water oxidation in the oxygen-evolving complex of photosystem II

ABSTRACT

QM(UB3LYP)/MM(AMBER) calculations were performed for the locations of the transition structure (TS) of the oxygen–oxygen (O–O) bond formation in the S₄ state of the oxygen-evolving complex (OEC) of photosystem II (PSII). The natural orbital (NO) analysis of the broken-symmetry (BS) solutions was also performed to elucidate the nature of the chemical bonds at TS on the basis of several chemical indices defined by the occupation numbers of NO. The computational results revealed a concerted bond switching (CBS) mechanism for the oxygen–oxygen bond formation coupled with the one-electron transfer (OET) for water oxidation in OEC of PSII. The orbital interaction between the σ-HOMO of the Mn(IV)₄–O₍₅₎ bond and the π*-LUMO of the Mn(V)₁=O₍₆₎ bond plays an important role for the concerted O–O bond formation for water oxidation in the CaMn₄O₆ cluster of OEC of PSII. One electron transfer (OET) from the π-HOMO of the Mn(V)₁=O₍₆₎ bond to the σ*-LUMO of the Mn(IV)₄–O₍₅₎ bond occurs for the formation of electron transfer diradical, where the generated anion radical [Mn(IV)₄–O₍₅₎]^-? part is relaxed to the ?Mn(III)₄?…?O₍₅₎^- structure and the cation radical [O₍₆₎=Mn(V)₁]⁺ ? part is relaxed to the ⁺O₍₆₎–Mn(IV)₁? structure because of the charge-spin separation for the electron-and hole-doped Mn–oxo bonds. Therefore, the local spins are responsible for the one-electron reductions of Mn(IV)₄->Mn(III)₄ and Mn(V)₁->Mn(IV)₁. On the other hand, the O₍₅₎^- and O₍₆₎⁺ sites generated undergo the O–O bond formation in the CaMn₄O₆ cluster. The Ca(II) ion in the cubane- skeleton of the CaMn₄O₆ cluster assists the above orbital interactions by the lowering of the orbital energy levels of π*-LUMO of Mn(V)₁=O₍₆₎ and σ*-LUMO of Mn(IV)₄–O₍₅₎, indicating an important role of its Lewis acidity. Present CBS mechanism for the O–O bond formation coupled with one electron reductions of the high-valent Mn ions is different from the conventional radical coupling (RC) and acid-base (AB) mechanisms for water oxidation in artificial and native photosynthesis systems. The proton-coupled electron transfer (PC-OET) mechanism for the O–O bond formation is also touched in relation to the CBS-OET mechanism.     

含色散介质的一维光子晶体微腔的透射谱

研究了含色散介质的一维光子晶体微腔的透射谱,对色散介质采用Lorentz振子模型,腔模的频率设置在光子晶体带隙中心。发现当吸收可以忽略时,色散效应将导致在腔模附近有很高的态密度,与此相应地在透射谱中出现一个较宽的透射带。当吸收存在时透射带中心的透射峰消失,但带尾的透射峰依然存在。     

Numerical analysis of the Toda lattice equations

Numerical solutions to three systems of integrable evolutionary equations from the Toda lattice hierarchy are analyzed. These are the classical Toda lattice, the second local dispersive flow, and the second extended dispersive flow. Special attention is given to the properties of soliton solutions. For the equations of the second local flow, two types of solitons interacting in a special manner are found. Solutions corresponding to various initial data are qualitatively outlined.     

Comparative Study on Large and Small Signal Theory for Intensity Modulation Response of Semiconductor Lasers Including Higher-Order Dispersion Terms

In this article, the comparison of large signal theory and small signal theory has been done with dispersive propagation of optical signal with IMDD (Intensity Modulation Direct Detection) systems for semiconductor lasers with higher-order dispersion terms. The expressions for an exact large signal theory and small signal theory including higher-order dispersion terms for propagation of an optical wave with sinusoidal amplitude and frequency modulation in a dispersive fiber have been derived. It is observed that small signal theory is more sensitive compared to large signal theory in terms of intensity modulation/direct detection systems. Also, it is reported that for large signal analysis the higher-order effects of dispersion can be ignored, whereas for small signal theory, the higher-order effects can be ignored for lower modulation frequencies only. The variation in the transfer function for various values of modulation indices are greater for small signal analysis than for large signal analysis. Also, as the intensity modulation index is increased, there is a decrease in the value of transfer function. The large signal model approximates the small signal model for lower values of the intensity modulation index.     

The Role of a Specific Response of Media in the Vavilov-Cherenkov Effect

It is shown that the condition υ > υ_p (ω), which is necessary in order to trigger the Vavilov-Cherenkov effect, determines the interval of radiated frequencies and it alone cannot establish a strong restriction to the velocity of the particle. It is exhibited that it is possible to define a general lower bound for the velocity of the particle, which does not depend on the frequency when both, a specific response of the medium is taken into account and the mentioned condition is considered. The minimum value of the phase velocity of light in the medium determines the existence of such general lower bound.     

利用相位共轭技术补偿光纤中色散效应的条件

利用相位共轭器的频率反转特性的,补偿光纤中的色散效应,在理论上和实验上得到了证明.由色散脉冲的傅里叶交换确定了光纤中二次色散效应可以被忽略的条件,得到了共轭器的反射率和带宽与非线性介质的长度L,参数|K|L之间的关系曲线,找到了影响补偿效果的主要因素.     

铜铝合金中γ_2相沉淀的分析电镜研究

Cu-12.7(wt)%Al合金从900℃高温淬至365℃～500℃温度范围等温不同时间(30秒至15分钟)的试样中形成了大量树枝状的γ_2相沉淀粒子。应用配有X线能谱仪(XEDS)和电子能量损失谱仪(EELS)的分析电子显微镜(JEOL JEM-2000FX型)对上还试样研究,结果表明:这些γ_2相粒子具有富铝的“核心”,长大到粒子线度大于约800nm后以不稳定方式生长成“花朵”状。生长过程中伴随着溶质元素Al由基体向γ_2相内的富集。而且在γ_2相粒子内部呈现出Spinodal分解组织的形貌特征,表明γ_2粒子内形成了化学成分调幅。EELS分析表明试样含氧。     

Multilayered Cu–Ti deposition on silicon substrates for chemiresistor applications

Abstract

On the perspective to develop CuO–TiO₂ MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO₂ in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.