用透射电镜法研究聚(苯乙烯-异戊二烯)二嵌段共聚物微相分离的微区尺寸

本文采用透射电镜(TEM)法,系统地研究了具有不同组成,不同分子量和不同形态结构的聚(苯乙烯-异戊二烯)二嵌段共聚物,并由TEM照片直接测量具有栓状,层状和有规双连续双金钢石(OBDD)结构的PS-PI二嵌共聚物的微区尺寸,讨论了其与分子量的关系。实验证明嵌段共聚物微相分离有规结构的微区尺寸大小与分子量呈2/3的关系。     

规整链球型含C_(60)聚(丙烯酸β-羟乙酯)的合成及其在水中的自组装

Ｃ60 由于其独特的物理化学性质 ,在生命科学中引起了人们的广泛兴趣 .例如 :水溶性Ｃ60 的羧酸衍生物 ,羟基取代Ｃ60 ,Ｃ60 的氨基酸水溶性衍生的合成已有报道[1～ 3] ,并被用来研究Ｃ60 的生物化学及医学活性 .Ｔｏｋｕｙａｍａ[4 ] 等合成了酶功能化Ｃ60及与核酸连接的Ｃ60 ,研究并证明了它的细胞毒性及Ｇ 选择ＤＮＡ切割能力等生化活性 .Ｆｒｉｅｄｍａｎ[5]等合成了水溶性Ｃ60 的羧酸衍生物 ,研究了它对ＨＩＶ 1艾滋病毒的抑制作用 ,此外 ,关于不同Ｃ60含量的Ｃ60 蛋白质衍生物的合成及性质的研究也有报道[6] .Ｃ60 是一个直径为 0 71…     

三价铕荧光络合物与聚乙烯吡咯烷酮复合物研究

为研究稀土荧光络合物与高分子形成的复合物的结构与发光性能间的关系,利用α-噻吩甲酰三氟丙酮（TTA）和三苯基氧化膦（TPPO）与氯化铕（EuCl₃）分别制备了Eu(TTA)₃·2H₂O和Eu(TTA)₃·(TPPO)₂络合物,及其与聚乙烯吡咯烷酮（PVP）的复合物。采用荧光光谱,红外光谱和透射电镜等方法对复合物进行了表征。荧光光谱测定结果表明Eu(TTA)₃·2H₂O与PVP K30结构单元摩尔比为1∶35的PVP/Eu(TTA)₃·2H₂O复合物的612　nm发射峰的荧光强度较Eu(TTA)₃·2H₂O络合物有显著提高。红外光谱研究表明络合物的Eu3+与PVP分子的羰基之间存在着明显的配位作用,并且存在多种配位方式。透射电镜观察结果表明复合物具有微相分离结构,其中的稀土络合物为无定形结构,这进一步表明PVP与络合物分子间存在相互作用。     

氧化锌纳米带中的面缺陷

面缺陷是纳米带中非常普遍和非常重要的一类缺陷.在有些情况下,面缺陷对于高表面能指数面的出现起着决定性的作用, 同时,它们可以诱导纳米带沿着特殊的方向生长.面缺陷可以是孪晶或双晶,层错和由杂质原子聚集在特定原子面所形成的间隙原子层.在本文中,利用透射电子显微术,我们将介绍氧化锌纳米带中被发现的几种面缺陷.我们确认了两种孪晶/双晶结构,它们的孪晶面分别是(0113)和(2112)面.基面层错有I1 和I2两种.在大尺寸的纳米带中,I1基面层错可以折叠到(2110)面形成棱面层错.当少量的In离子掺入氧化锌纳米带后,我们发现伴随着杂质In在基面的聚集,形成了两种倒反畴界.     

3C-SiC纳米颗粒量子限制效应的实验证据

报道了关于3C—SiC纳米颗粒量子限制效应的实验证据．将电化学腐蚀3C—SiC多晶靶材得到的多孔材料在水溶液中进行超声处理，制备出发光的3C—SiC纳米颗粒溶液．透射电镜实验表明，所得颗粒直径分布在1-6nm范围，光致发光谱实验给出了存在量子限制效应的实验证据．发光范围在440-460nm．SiC纳米颗粒量子限制效应的发现，为该材料在光电子发光器件中的应用提供了重要的实验基础．     

原位透射电镜在电化学领域中的应用

原位透射电镜技术作为实时和高空间分辨观测工具,是完善电化学过程监测、剖析机理、研究材料构效关系,进一步提升电化学性能的有力手段.本文在介绍原位液体电镜发展历程的基础上,总结了近年来原位透射电镜技术在电化学沉积、电化学储能、电催化及电化学腐蚀中的应用研究,并针对该技术目前存在的挑战和在电化学领域的进一步应用探索作了总结和...     

山竹果壳提取液中金纳米粒子的生物合成及光谱性质研究

在山竹果壳提取液中,以山竹多酚既作还原剂又作保护剂,制备了具有高度稳定性、单分散性的亲水性金纳米粒子。利用紫外可见分光光度法、透射电子显微镜和X射线衍射等手段对制备的金纳米粒子进行了表征和分析。结果表明:金纳米粒子的尺寸大小在9~23nm范围,升高温度其还原反应速率加快,所得金纳米粒子的尺寸减小、单分散性提高。山竹多酚保护金的金纳米颗粒具有pH值调控的分散可逆性。降低山竹提取液的浓度可得到包括单晶纳米片在内的多形态金纳米颗粒。     

原位透射电镜研究正交相五氧化二铌纳米片的电化学储钠机制

由于正交相五氧化二铌(T-Nb₂O₅)为ReO₃型层状结构,锂、钠离子可以在其(001)平面快速脱嵌,而在[001]方向的传输一般较难。本研究通过原位透射电子显微镜(Transmission Electron Microscope,TEM)方法研究钠在T-Nb₂O₅纳米片(001)面内及[001]方向的钠离子电化学嵌入行为,发现由于纳米片晶体存在大量的位错和畴界,钠离子可通过这些缺陷穿越(001)面扩散,并进而在深层的(001)面内快速扩散。同时,本研究还发现刚合成的T-Nb₂O₅纳米片在[001]方向上存在调制结构,存在交替分布的压应变和张应变区域,而钠离子的嵌入可以调节这些应变分布。     

用透射电镜和火焰原子吸收法分析大气总悬浮颗粒物

以大气总悬浮颗粒物为主要研究对象,用透射电镜观察其形貌,污染特征明显;用火焰原子吸收法测定其水溶性常规元素K、Na、Ca和Mg。K、Na、Ca和Mg的检出限分别为0.105、0.124、0.259和0.237mg/kg,线性相关系数不低于0.9979,加标回收率为90.0%～95.0%,测定结果的相对标准偏差为0.6%～2.1%(n=6)。     

PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.