埋地管道在冻土带的热力变形分析

埋地油气管道通过永冻土地带时,由于管内介质与周围的冻土发生了热力作用,使冰土解冻,在管道周围形成融化圈。文章分析了永冻土的特点,建立了永冻土地带土壤传热数学模型:融化圈内外传热方程、管道向土壤和土壤表面向大气所放热量的守恒关系、融化圈界面处土壤温度、相变界面处固相变为液相的传热条件。还建立了埋地管道模型,并以穿过永冻土地带土壤的输油管道为例,分析并计算了各种应力的最大值所在的位置和大小,提出了在永冻土地带减小管道热力变形的措施。     

孔西潜山奥陶系原生油藏成藏时期探讨

黄骅坳陷孔西潜山发现奥陶系（孔古3井、孔古7井）低产原生油藏和石炭-二叠系原生油气藏（孔古4井），油源对比结果证明，前者原油主要源于中奥陶统马家沟组灰岩，后者油气主要源于石炭系太原组及二叠系山西组煤系泥岩。根据孔古3井油藏的两期流体包裹体及储集层自生伊利石K-Ar年龄测定结果，油藏属两期成藏，第一期为晚三叠世（距今222.51～240.34Ma），第二期为第三纪，以晚第三纪为主。     

千米桥潜山构造特征及其在油气成藏中的作用

千米桥潜山是黄骅坳陷最典型的新生古储型油气藏，恢复潜山古构造是认识其油气藏特征的重点和难点之一，运用地质力学方法研究潜山内幕构造之后认为，该潜山的形成基础是古生界印支期宽缓复背斜，在燕山期挤压构造作用下形成由逆冲叠瓦扇和反冲断层构成的三角带内幕构造，抬升受侵蚀形成潜山主体，喜马拉雅的两次古旋拉张使潜山掀斜定型。晚第三纪以来发生整体热沉降，潜山两侧凹陷沙三段生成油气向潜山侧向运移成藏。     

回顶法灌注混凝土浆成桩工艺

探讨了回顶法灌注混凝土浆的成桩工艺，分析了影响混凝土浆灌注质量的主要因素，并给出了相应的技术参数和措施。     

中原油田深井大井眼段钻井液工艺

濮深8井是中原油田在西部洼陷南部寻找接替储量的一口重点深探井,也是中原油田第一口井深达6000m的超深井。分析了濮深8井钻井液的配备及维护和处理技术,得出深井大井眼段钻井液工艺技术存在以下问题:井眼大,钻井液量及钻屑量多,处理时间长,处理剂用量多,处理频繁;返速低使钻井液清洗井眼的能力减弱;井下温度高使处理剂的作用明显降低,二氧化碳的侵入使钻井液性能变差。钻井液维护处理的较好方法是定时、定量补充处理剂胶液。固相控制是深井大井眼段钻井液工艺中的关键问题,必须配套并且有效地使用固控设备,以维护好钻井液性能。     

华北油田鄚东地区深井钻井液技术

鄚东地区钻井过程中经常发生垮塌、卡钻、井漏等复杂事故。该地区深井钻井采用了抑制性及封堵性较强的铵基沥青树脂高密度钻井液体系,并根据地层特点,对不同井段制定了相应的钻井液维护处理措施。结果表明,该钻井液体系抑制性好,抗温、抗污染能力强,性能稳定,成功地控制了复杂事故的发生,满足了该地区深层钻井的要求。     

油气集输管道最佳敷设方式的分析

根据大庆油田油气集输工艺设计的实践，分析了几种实用的油气集输管道敷设方式的优缺点。在对不同敷设方式的管道热耗做了较详细计算的基础上，进行了比较，提出了确定油气集输管道的最佳敷设方式：站外管道基本上采用埋地敷设；站内管道则应依据站址处的常年最高地下水位资料来确定，即在保证管道不长期受地下水浸泡的前提下，站内室外管道以埋地敷设为主，室内管道以架空与理地同时敷设为最佳；地下水位高的站内，以架空敷设最佳。     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

Stress State of Bent Buried Pipelines

The authors consider edge effects in buried pipelines that occur in the region of joining of a straight buried pipe and a bent insert (factory bend, elbow, or an elastically bent segment). The action of those effects results in the appearance of additional bending moments, which are proportional to the difference between the axial force in an infinite straight pipeline and that in a closed-end pipe, and depend on the geometrical parameters of the pipeline and physical-mechanical characteristics of the soil. Specific examples of analysis of elastic interaction of a pipeline with the soil for pipe bends with various radii of the bend arc are offered. It is shown that additional bending stresses may exceed appreciably the stresses from the axial force, and therefore, they should be taken into account when designing and building pipelines. The solution for an elastically bent segment has been obtained and analyzed.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.