Micromechanisms and Mechanics of Damage and Fracture in Thin Film/Substrate Systems

The purpose of this paper is to review the mechanisms and available theoretical methods for modeling the strength and failure of thin film/substrate systems     

STUDY ON THE DUCTILE DEFORMATION DOMAIN OF THE SIMPLE SHEAR IN ROCKS——TAKING BRITTLE FAULTS OF THE COVERING STRATA IN THE SOUTHERN JIANGSU AREA AS AN EXAMPLE

A study on the ductile deformation domain of the brittle fault in the shallow level ofthe crust is a new probe field for the modern structural geology. Taking the southern Jiang-su Province area as an example the orientation measurement of quartz crystals, the com-positional texture observation of three pressure sensitive minerals and the rheological param-eter determination of dislocation densities, etc. have been demonstrated and analysed basedon typical samples in the present paper. In addition, their generation mechanisms arealso discussed from the cataclastic rheology, the dynamic differentiation and the simpleshearing, specially, from the Ode strength theory. Finally, a generative relationship betweenthe ductile deformation domain of the brittle fault system, in the regional layer--slip andthe formation of the stratabound ore deposit is shown as well.     

Succession of stacking disorder in hard-sphere crystal under gravity by Monte Carlo simulation

We have performed Monte Carlo simulations of hard spheres under gravity. Vertical boundaries are hard walls, which are well separated with each other. On the other hand, the periodic boundary condition is imposed in the horizontal direction. While we previously reported enhancement of crystallinity as well as crystallization due to gravity, we present here the results that demonstrate the succession of a defect. In case that the crystal formed at the bottom of the system includes kinds of stacking disorders for the (0 0 1) growth, twin band structure develops as mediated by a stacking disorder succeeded in the crystal formed in the fluid region which lies on the bottom crystal. In case that the stacking structure along horizontal direction changes from the (1 1 1) stacking to the (0 0 1) stacking, twin band structure in the (0 0 1) stacking region develops as succeeded in the crystal transformed. The twin band structure also becomes large with its upward growth.     

Si中30度部分位错弯结运动特性的分子模拟

首先使用分子动力学方法(MD)得出了左弯结(LK)和右弯结(RK)在不同温度和剪应力作用下的速度特性和运动过程.然后利用基于紧束缚势(TB)的nudged elastic band(NEB)方法计算LK和RK的迁移势垒.由计算结果得出,单个LK或RK的势垒很高,运动速度相对较慢;LK中的多弯结对结构和由RK分解产生的右弯结-重构缺陷(RC)能够加速位错运动;其中,RC能促进30°部分位错更快地迁移.     

晶格畸变检测仪研究碳化硅晶片中位错缺陷分布

利用晶格畸变检测仪研究了SiC晶片位错分布情况,通过对熔融KOH腐蚀后的SiC晶片进行全片或局部扫描,从而得到完整SiC晶片或局部区域的位错分布.与LEXT OLS40003D激光共聚焦显微镜扫描腐蚀图进行比较,晶格畸变检测仪扫描腐蚀图可以将晶片上位错腐蚀坑信息完全呈现出来,且根据腐蚀坑呈现的颜色及尺寸大小,可以分辨出...     

半导体单晶生长过程中的位错研究

阐述了现有的半导体单晶位错模型,即临界切应力模型和粘塑性模型的基本理论及应用状况.分析了熔体法单晶生长过程中影响位错产生、增殖的各种因素,以及抑制位错增殖的措施.与熔体不润湿、与晶体热膨胀系数相近的坩埚材料,低位错密度的籽晶可有效地抑制生长晶体的位错密度;固液界面的形状及晶体内的温度梯度是降低位错密度的关键控制因素,而两因素又受到炉膛温度梯度、长晶速率、气体和熔体对流等晶体生长工艺参数的影响.最后,对熔体单晶生长过程的位错研究进行了展望.     

6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大.本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境.研究发现:渐变长度为...     

The stress birefringence images of low angle grain boundaries in 6H‐SiC single crystals

Low angle grain boundaries, also referred to as domain walls, is one of the major structural defects in c‐axis physical vapor transport (PVT) grown hexagonal Silicon Carbide. To investigate the nature of the low angle boundaries, polarized optical microscope was used. The low angle boundary gives bright stress birefringence images under polarizing optical microscope. Periodic extinction of the stress birefringence images occurs when the (0001)‐face SiC is rotated under polarizing optical microscope. The micro‐structure of the low angle boundary is proposed. Using dislocation elastic theory, it is theoretically confirmed that the domains consist of uniform pure edge dislocations with Burgers vectors perpendicular to the dislocation arrays. The simulation results coincide with the experimental observations.     

Controllable growth and characterizations of hybrid spiral-like atomically thin molybdenum disulfide

Monolayer MoS₂ is an emerging two-dimensional semiconductor with wide-ranging potential applications in novel electronic and optoelectronic devices. Here, we reported controlled vapor phase growth of hybrid spiral-like MoS₂ crystals investigated by multiple means of X-Ray photoemission spectroscopy, scanning electron microscopy, atomic force microscopy, kelvin probe force microscopy, Raman and Photoluminescence techniques. Morphological characterizations reveal an intriguing hybrid spiral-like MoS₂ feature whose lower planes are AB Bernal stacking and upper structure is spiral. We ascribe the hybrid spiral-like structure to a screw dislocation drive growth mechanism owing to lower supersaturation and layer-by-layer growth mode. In addition, the electrostatic properties of MoS₂ microflakes with hybrid spiral structures are obvious inhomogeneous and dependent on morphology manifested by kelvin probe force microscopy. Our work deepens the understanding of growth mechanisms of CVD-grown MoS₂, which is also adoptable to other TMDC materials.     

Atomistic simulation of kink structure on edge dislocation in bcc iron

Based on the general theory of dislocation and kink, we have constructed the three kink models corresponding to the 1/2 （111）{011} and 1/2 （111）{112} edge dislocations （EDs） in bcc Fe using the molecular dynamics method. We found that the geometric structure of a kink depends on the type of ED and the structural energies of the atom sites in the dislocation core region, as well as the geometric symmetry of the dislocation core and the characteristic of the stacking sequence of atomic plane along the dislocation line. The formation energies and widths of the kinks on the 1/2 （111）{011} and 1/2 （111）{112} EDs are calculated, the formation energies are 0.05eV and 0.04eV, and widths are 6.02b and 6.51b, respectively （b is the magnitude of the Burgers vector）. The small formation energies indicate that the formation of kink in the edge dislocation is very easy in bcc Fe.